Datasheet > R1500

R1500

更新时间： 2024-09-12 09:49:35

品牌	Logo	应用领域
DIOTECH		高压
页数	文件大小	规格书
2页	793K
描述
HIGH VOLTAGE SILICON RECTIFIER

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中文翻译

获取价格

数据手册

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R1500 数据手册

R1200 THRU R2000

HIGH VOLTAGE SILICON RECTIFIER

Reverse Voltage - 1200 to 2000 Volts

Forward Current - 0.5 Ampere

FEATURES

DO-41

●

Low cost

Low leakage

Low forward voltage drop

●

High current capability

1.0 (25.4)

MIN.

0.107 (2.7)

0.080 (2.0)

DIA.

0.205 (5.2)

0.160(4.1)

MECHANICAL DATA

Case: JEDEC DO-41 molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

1.0 (25.4)

MIN.

Polarity: Color band denotes cathode end

Mounting Position: Any

0.034 (0.86)

0.028 (0.71)

DIA.

Weight:0.012 ounce, 0.33 grams

Dimensions in inches and (millimeters)

@ T_A= 25 C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Unit

Characteristic

Symbol

R1200

1200

840

R1500

1500

1050

R2000

2000

1400

R1800

1800

1260

V_RRM

V_RWM

V_R

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_R(RMS)

I_O

RMS Reverse Voltage

Average Rectified Output Current

(Note 1)

500

@ TA= 50 C

Non-Repetitive Peak Forward Surge Current 8.3ms

single half sine-wave superimposed on rated load

(JEDEC Method)

I_FSM

V_FM

2.0

Forward Voltage

@ I_F= 500mA

3.0

Peak Reverse Leakage Current

at Rated DC Blocking Voltage

I_RM

C_j

5.0

K/W

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance Junction to Ambient

Operating and Storage Temperature Range

117

T_j,T_STG

-65 to +150

Notes:

1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

中文翻译

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