PHOTOMULTIPLIER TUBE
R11102, R11102-01
38 mm Diameter Photomultiplier Tube
For Scintillation Counting, Gamma Camera
Bialkali Photocathode, 10 Stages, Head-on Type
GENERAL
Parameter
Description / Value
300 to 650
Unit
nm
nm
—
mm
—
Spectral Response
Wavelength of Maximum Response
420
Bialkali
MateriaI
Minimum Effective Area
Photocathode
34
Window Material
Dynode
Borosilicate glass
Circular and linear-focused
10
Structure
Number of Stages
—
—
Operating Ambient Temperature
-30 to +50
°C
R11102 : -30 to +50
R11102-01: -80 to +50
Storage Temperature
°C
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Value
1250
200
Unit
V
V
Between Anode and Cathode
Supply Voltage
Between Anode and Last Dynode
Average Anode Current
0.1
mA
CHARACTERISTICS (at 25 °C)
Parameter
Min.
80
—
10
—
—
—
—
—
—
—
—
—
—
Typ.
120
89
11.5
120
8.9 × 104
1.0 × 106
2
3.2
34
0.5
0.5
10 (50)
30 (70)
Max.
—
—
—
—
—
—
20
—
—
—
—
—
—
Unit
µA/lm
mA/W
—
A/lm
A/W
—
nA
ns
ns
%
Luminous (2856 K)
Cathode Sensitivity
Radiant at 420 nm
Blue Sensitivity Index (CS 5-58)
Luminous (2856 K)
Radiant at 420 nm
Anode Sensitivity
Gain
Anode Dark Current (after 30 min storage in darkness)
Anode Pulse Rise Time
Electron Transit Time
Time Response
Long Term
Short Term
Stability
%
mA
mA
2 % Deviation
5 % Deviation
Pulse Linearity
NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.
): Measured with the special voltage distribution ratio (Tapered Divider) shown below.
(
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
Electrodes
K
Dy1
Dy2
Dy3
Dy4
Dy5
Dy6
Dy7
Dy8
Dy9
Dy10
P
Normal Divider Type
Tapered Divider Type
2
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
3
1.2
1.5
2.2
3.6
Supply Voltage: 1000 V, K: Cathode, Dy: Dynode, P: Anode
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2012 Hamamatsu Photonics K.K.