Datasheet > QST6_05

QST6_05

更新时间： 2024-09-23 09:51:03

品牌	Logo	应用领域
罗姆 - ROHM		放大器
页数	文件大小	规格书
3页	65K
描述
Low frequency amplifier

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中文翻译

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数据手册

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QST6_05 数据手册

QST6

Transistors

Low frequency amplifier

QST6

zExternal dimensions (Unit : mm)

zApplication

Low frequency amplifier

Driver

2.8

1.6

zFeatures

1) A collector current is large.

2) V^CE(sat): max. −180mV

At I^C= −1A / IB= −50mA

Each lead has same dimensions

Abbreviated symbol : T06

zEquivalent circuit

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Symbol

Limits

−15

−12

−6

Unit

(6)

(5)

(4)

VCBO

VCEO

VEBO

Collector-emitter voltage

Emitter-base voltage

−2

−4

500

1.25

150

°C

Collector current

∗1

∗2

∗3

Power dissipation

(1)

(2)

(3)

Junction temperature

Tstg

Range of storage temperature

−55 to +150

∗1 Single pulse, P =1ms

∗2 Each Termminal Mounted on a Recommended

∗3 Mounted on a 25mm

25mm

0.8mm ceramic substrate

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

BV^CBO

BV^CEO

BV^EBO

Min.

−15

−12

−6

−

270

−

Typ.

−

Max.

−

Unit

Conditions

=−10µA

=−1mA

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

−

=−10µA

CBO

EBO

CE(sat)

−100

−180

680

−

MHz

CB=−15V

EB=−6V

−

Emitter cutoff current

−120

−

360

C=−1A, I

=−50mA

=−200mA^∗

=200mA, f=100MHz^∗

Collector-emitter saturation voltage

DC current gain

CE=−2V, I

Transition frequency

CB=−10V, I

=0A, f=1MHz

Cob

−

Collector output capacitance

∗ Pulsed

Rev.A

1/2

12 3

中文翻译

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