QST5

更新时间： 2024-09-23 06:06:19

品牌	Logo	应用领域
罗姆 - ROHM		放大器
页数	文件大小	规格书
3页	63K
描述
Low frequency amplifier

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中文翻译

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数据手册

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QST5 数据手册

QST5

Transistors

Low frequency amplifier

QST5

zExternal dimensions (Unit : mm)

zApplication

Low frequency amplifier

Driver

2.8

1.6

zFeatures

1pin mark

1) A collector current is large.

2) V_CE(sat): max. −370mV

At lc= −1.5A / l_B= −75mA

Each lead has same dimensions

ROHM : TSMT6 Abbreviated symbol : T05

zEquivalent circuit

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

−30

−6

Unit

(6)

(5)

(4)

VCBO

VCEO

VEBO

−2

−4

500

1.25

150

°C

Collector current

Power dissipation

∗1

∗2

∗3

(1)

(2)

(3)

Junction temperature

Range of storage temperature

∗1 Single pulse, Pw=1ms

Tstg

−55 to +150

∗2 Each terminal mounted on a recommended

∗3 Mounted on a 25mm

25mm

0.8mm ceramic substrate

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

BV^CBO

BVCEO

BV^EBO

Min.

−30

−6

−

270

−

Typ.

−

Max.

−

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff curent

= −10µA

= −1mA

−

= −10µA

CB= −30V

EB= −6V

CBO

EBO

CE(sat)

−100

−370

680

−

MHz

Emitter cutoff current

−

Collector-emitter saturation voltage

DC current gain

−180

−

280

= −1.5A, I

CE= −2V, I

= −75mA

= −200mA

=200mA, f=100MHz

Transition frequency

CB= −10V, I

=0A, f=1MHz

Collector output capacitance

Cob

−

Rev.B

1/2

12 3

中文翻译

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