QS6K1
QS6K1FRA
Transistors
AEC-Q101 Qualified
2.5V Drive Nch+Nch MOS FET
QS6K1FRA
QS6K1
zStructure
zExternal dimensions (Unit : mm)
Silicon N-channel
MOS FET
TSMT6
1.0MAX
2.9
1.9
0.95 0.95
0.85
0.7
(6)
(5)
(4)
zFeatures
1) Low on-resistance.
0~0.1
(1)
(2)
(3)
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (TSMT6).
1pin mark
0.16
0.4
Each lead has same dimensions
zApplication
Abbreviated symbol : K01
Power switching, DC / DC converter.
zEquivalent circuit
zPackaging specifications
(6)
(5)
(4) (6) (5) (4)
Package
Taping
TR
∗2
∗2
Type
Code
Basic ordering unit (pieces)
3000
QS6K1
QS6K1FRA
(1) (2) (3)
(1) Tr1 Gate
(2) Tr2 Source
∗1
∗1
(1)
(2)
(3)
(3) Tr2 Gate
(4) Tr2 Drain
(5) Tr1 Source
(6) Tr1 Drain
zAbsolute maximum ratings (Ta=25°C)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
<It is the same ratings for the Tr1 and Tr2>
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
Parameter
Drain-source voltage
Gate-source voltage
Symbol
VDSS
VGSS
ID
Limits
30
Unit
V
12
V
Continuous
Pulsed
1.0
A
Drain current
∗1
IDP
4.0
A
Source current
(Body diode)
Continuous
Pulsed
IS
0.8
A
∗1
∗2
ISP
4.0
A
1.25
0.9
W / TOTAL
Total power dissipation (TC=25°C)
PD
W / ELEMENT
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Tch
150
°C
°C
Tstg
−55 to +150
zThermal resistance
Parameter
Symbol
Limits
Unit
100
139
°C / W / TOTAL
°C / W / ELEMENT
∗
Channel to ambient
Rth (ch-a)
∗ Mounted on a ceramic board
Rev.B
1/3