QPM1017
®
5.7ꢀ–ꢀ7 GHz 100 W GaN Power Amplifier Module
Product Overview
Qorvo’s QPM1017 is a packaged, high-power C-band
amplifier module, fabricated on Qorvo’s production 0.15 um
GaN on SiC process (QGaN15). Covering 5.7ꢀ–ꢀ7 GHz, the
QPM1017 provides 100 W of saturated output power with
18 dB of large signal gain while achieving > 35% power-
added efficiency.
For satellite communications
applications, QPM1017 provides 40 W linear power with 25
dBc third order intermodulation distortion products.
The QPM1017 is packaged in a 10-lead 19.05 x 19.05 mm
bolt-down package with a Cu base for superior thermal
management. It can support a variety of operating
conditions to best support system requirements.
Key Features
To simplify system integration, QPM1017 is fully matched
to 50 ohms. Input port is DC grounded for improved ESD
performance, output port is AC coupled with integrated DC
blocking capacitor.
Frequency Range: 5.7 ꢀ– 7 GHz
PSAT (PIN = 32 dBm): 50 dBm
PAE (PIN = 32 dBm): > 35 %
Power Gain (PIN = 32 dBm): 18 dB
IM3 (POUT/Tone = 43 dBm): -25 dBc
Small Signal Gain: > 24 dB
The QPM1017 is ideal for supporting communications and
radar applications in both commercial and military markets
Bias: VD = +24 V, IDQ = 3.4 A, VG = -2.5 V typ.
Dimensions: 19.05 x 19.05 x 4.5 mm
RoHS compliant
Performance is typical across frequency. Please
reference electrical specification table and data plots for
more details.
Functional Block Diagram
Applications
C-Band Radar
1
10
Satellite Communications
2
3
9
8
7
6
4
5
Ordering Information
Part No.
Description
5.7ꢀ–ꢀ7 GHz 100 W GaN Power
Amplifier Module (10 pcs. pack)
Samples (2 pcs. pack)
QPM1017
QPM1017S2
QPM1017EVB Evaluation Board for QPM1017
Data Sheet Rev. A, September 2019 | Subject to change without notice
1 of 23
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