Datasheet > QPD0020TR7

QPD0020TR7

更新时间： 2024-12-02 02:52:03

品牌	Logo	应用领域
威讯联合 - QORVO		/
页数	文件大小	规格书
11页	1029K
描述
35 W, 48 V, DC â 6 GHz, GaN RF Power Transistor

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QPD0020TR7 数据手册

QPD0020

35 W, 48 V, DC – 6 GHz, GaN RF Power Transistor

Product Overview

The QPD0020 is a 35 W unmatched discrete GaN on SiC

HEMT which operates from DC to 6 GHz on a +48 V supply

rail. It is ideally suited for base station, radar and

communications applications and can support both CW and

pulsed mode of operations.

The QPD0020 can be used in Doherty architecture for the

final stage of a base station power amplifier for small cell,

microcell, and active antenna systems. The QPD0020 can

also be used as a driver in a macrocell base station power

amplifier.

20 Pin 4x3 mm QFN Package

Key Features

• Operating Frequency Range: DC to 6 GHz

• Operating Drain Voltage: +48 V

• Maximum Output Power (P_SAT): 34.7 W ⁽¹⁾

• Maximum Drain Efficiency: 77.8% ⁽¹⁾

• Efficiency-Tuned P3dB Gain: 18.8 dB ⁽¹⁾

• Surface Mount Plastic Package

The device is housed in an industry-standard 4x3 mm

surface mount QFN package.

Lead-free and ROHS compliant.

Notes:

1. Based on 2.7 GHz load pull data.

Functional Block Diagram

Applications

• W-CDMA / LTE

• Macrocell Base Station Driver

• Microcell Base Station

• Small Cell Final Stage

• Active Antenna

• Land Mobile and Military Radio Communications

• General Purpose Applications

Ordering Information

Part Number Description

QPD0020S2

Sample – 2 Pieces

QPD0020TR7

QPD0020EVB02

7” Reel – 500 Pieces

2.62 – 2.69 GHz Evaluation Board

Data Sheet Rev. A, December 11, 2018 | Subject to change without notice.

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