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fax id: 6011
PALCE22V10
Flash Erasable,
Reprogrammable CMOS PAL® Device
5 ns t
Features
PD
181-MHz state machine
Low power
•
— 10 ns military and industrial versions
— 90 mA max. commercial (10 ns)
— 130 mA max. commercial (5 ns)
7 ns t
CO
6 ns t
S
10 ns t
PD
CMOS Flash EPROM technology for electrical erasabil-
ity and reprogrammability
•
•
110-MHz state machine
— 15-ns commercial, industrial, and military versions
— 25-ns commercial, industrial, and military versions
High reliability
Variable product terms
— 2 x(8 through 16) product terms
User-programmable macrocell
— Output polarity control
•
•
— Proven Flash EPROM technology
— 100% programming and functional testing
— Individually selectable for registered or combinato-
rial operation
Functional Description
Up to 22 input terms and 10 outputs
DIP, LCC, and PLCC available
— 5 ns commercial version
•
•
The Cypress PALCE22V10 is a CMOS Flash Erasable sec-
ond-generation programmable array logic device. It is imple-
mented with the familiar sum-of-products (AND-OR) logic
structure and the programmable macrocell.
4 ns t
3 ns t
CO
S
Logic Block Diagram (PDIP/CDIP)
V
I
I
I
I
I
I
I
I
I
I
CP/I
1
SS
12
11
10
9
8
7
6
5
4
3
2
PROGRAMMABLE
AND ARRAY
(132 X 44)
8
10
12
14
16
16
14
12
10
8
Reset
Macrocell
Macrocell
Macrocell
Macrocell
Macrocell
Macrocell
Macrocell
Macrocell
Macrocell
Macrocell
Preset
13
I
14
15
16
17
18
19
20
21
22
23
24
I/O
9
I/O
8
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
I/O
2
I/O
1
I/O
0
V
CC
PLCC
Top View
LCC
Top View
Pin Configuration
CE22V10–1
4
3
2
1
2827 26
25
4
3 2 1 282726
I
I
I
5
6
7
8
9
10
11
25 I/O
24 I/O
23 I/O
2
3
4
5
6
7
8
9
I
I
I
I/O
I/O
I/O
2
3
4
24
23
22
21
20
19
22
NC
I
I
I
N/C
NC
I
I
I
N/C
21 I/O
20 I/O
19 I/O
5
6
7
I/O
I/O
I/O
5
6
7
10
11
121314 1516 1718
12131415161718
CE22V10–3
CE22V10–2
PAL is a registered trademark of Advanced Micro Devices.
Cypress Semiconductor Corporation
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3901 North First Street
•
San Jose
•
CA 95134
•
408-943-2600
March 1995 - Revised September 1996