Datasheet > QPA3069TR7

QPA3069TR7

更新时间： 2024-11-06 02:52:47

品牌	Logo	应用领域
威讯联合 - QORVO		/
页数	文件大小	规格书
19页	778K
描述
2.7 â 3.5 GHz 100 W GaN Power Amplifier

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QPA3069TR7 数据手册

QPA3069

2.7 – 3.5 GHz 100 W GaN Power Amplifier

Product Overview

Qorvo’s QPA3069 is a packaged, high-power S-band

amplifier fabricated on Qorvo’s production 0.25 um GaN

on SiC process (QGaN25). Covering 2.7ꢀ–ꢀ3.5 GHz, the

QPA3069 provides 50 dBm of saturated output power and

25 dB of large-signal gain while achieving 53% power-

added efficiency.

The QPA3069 is packaged in a 7 mm x 7 mm 48-pin

plastic overmolded package. It can support a variety of

operating conditions to best support system requirements.

With good thermal properties, it can support a range of

bias voltages.

Key Features

• Frequency Range: 2.7ꢀ–ꢀ3.5 GHz

• P_SAT(P_IN=25 dBm): > 50 dBm

The QPA3069 MMIC has DC blocking capacitors on both

RF ports, which are matched to 50 ohms. The QPA3069 is

ideal for military radar systems.

• PAE (P_IN=25 dBm): > 53 %

• Power Gain (P_IN=25 dBm): > 25 dB

• Bias: V_D= 30 V, I_DQ= 300 mA, P_IN= 25 dBm

• Package Dimensions:7.00 x 7.00 x 0.85 mm

Lead-free and RoHS compliant.

Performance is typical across frequency. Please

reference electrical specification table and data plots for

more details.

Functional Block Diagram

48 47 46 45 44 43 42 41 40 39 38 37

Applications

• Radar

31 RF Out

RF In

30 RF Out

Ordering Information

Part No.

Description

2.7 – 3.5 GHz 100 W GaN Power

Amplifier (10 Pcs.)

QPA3069

13 14 15 16 17 18 19 20 21 22 23 24

250 piece 7” reel

QPA3069TR7

QPA3069EVB

Top View

Evaluation Board for QPA3069

Data Sheet Rev. C, September 2019

1 of 19

www.qorvo.com

12 3 4 5 6 7...19

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