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QPA3069 PDF预览

QPA3069

更新时间: 2024-11-25 02:52:51
品牌 Logo 应用领域
威讯联合 - QORVO /
页数 文件大小 规格书
19页 778K
描述
2.7 – 3.5 GHz 100 W GaN Power Amplifier

QPA3069 数据手册

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QPA3069  
2.7 3.5 GHz 100 W GaN Power Amplifier  
®
Product Overview  
Qorvo’s QPA3069 is a packaged, high-power S-band  
amplifier fabricated on Qorvo’s production 0.25 um GaN  
on SiC process (QGaN25). Covering 2.7ꢀ–ꢀ3.5 GHz, the  
QPA3069 provides 50 dBm of saturated output power and  
25 dB of large-signal gain while achieving 53% power-  
added efficiency.  
The QPA3069 is packaged in a 7 mm x 7 mm 48-pin  
plastic overmolded package. It can support a variety of  
operating conditions to best support system requirements.  
With good thermal properties, it can support a range of  
bias voltages.  
Key Features  
Frequency Range: 2.7ꢀ–ꢀ3.5 GHz  
PSAT (PIN=25 dBm): > 50 dBm  
The QPA3069 MMIC has DC blocking capacitors on both  
RF ports, which are matched to 50 ohms. The QPA3069 is  
ideal for military radar systems.  
PAE (PIN=25 dBm): > 53 %  
Power Gain (PIN=25 dBm): > 25 dB  
Bias: VD = 30 V, IDQ = 300 mA, PIN = 25 dBm  
Package Dimensions:7.00 x 7.00 x 0.85 mm  
Lead-free and RoHS compliant.  
Performance is typical across frequency. Please  
reference electrical specification table and data plots for  
more details.  
Functional Block Diagram  
48 47 46 45 44 43 42 41 40 39 38 37  
Applications  
36  
1
2
35  
Radar  
34  
3
33  
4
32  
5
31 RF Out  
RF In  
RF In  
6
30 RF Out  
7
29  
28  
27  
26  
25  
8
9
Ordering Information  
10  
11  
12  
Part No.  
Description  
2.7 3.5 GHz 100 W GaN Power  
Amplifier (10 Pcs.)  
QPA3069  
13 14 15 16 17 18 19 20 21 22 23 24  
250 piece 7” reel  
QPA3069TR7  
QPA3069EVB  
Top View  
Evaluation Board for QPA3069  
Data Sheet Rev. C, September 2019  
1 of 19  
www.qorvo.com  

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