Datasheet > QPA3055PS2

QPA3055PS2

更新时间： 2022-06-24 15:44:25

品牌	Logo	应用领域
威讯联合 - QORVO		/
页数	文件大小	规格书
26页	821K
描述
100 W S-Band GaN Power Amplifier

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QPA3055PS2 数据手册

QPA3055P

100 W S-Band GaN Power Amplifier

Product Overview

Qorvo’s QPA3055P is a packaged, high-power S-band

amplifier fabricated on Qorvo’s production 0.25 um GaN

on SiC process (QGaN25). Covering 2.9ꢀ–ꢀ3.5 GHz, the

QPA3055P provides 100 W of saturated output power and

25 dB of large-signal gain while achieving 53% power-

added efficiency.

The QPA3055P is packaged in a 10-lead 15.2 x 15.2 mm

bolt-down package with a Cu base for superior thermal

management. It can support a variety of operating

conditions to best support system requirements. With

good thermal properties, it can support a range of bias

voltages and will perform well under both short and long

pulse operations.

Key Features

• Frequency Range: 2.9ꢀ–ꢀ3.5 GHz

• P_SAT(P_IN=25 dBm): 50 dBm

• PAE (P_IN=25 dBm): > 53 %

The QPA3055P MMIC has DC blocking capacitors on

both RF ports, which are matched to 50 ohms. The

QPA3055P is ideal for both commercial and military radar

systems.

• Power Gain (P_IN=25 dBm): 25 dB

• Bias: V_D= 30 V, I_DQ= 300 mA, P_IN= 25 dBm

• Alt. Bias: V_D= 30 V, I_DQ= 1500 mA, P_IN= 22 dBm

• Characterized at PW = 15 ms, DC = 30%, and PW =

100 us, DC = 10%

Lead-free and RoHS compliant.

• Package Dimensions: 15.2 x 15.2 x 3.5 mm

Evaluation board available on request.

Performance is typical across frequency. Please

reference electrical specification table and data plots for

more details.

Functional Block Diagram

Applications

• Radar

Ordering Information

Part No.

Description

100 W S-Band GaN Power Amplifier (10

Pcs.)

QPA3055P

QPA3055PS2

Samples (2 pcs.)

Evaluation Board for QPA3055P

QPA3055PEVB1

Data Sheet Rev. B, June 2018

1 of 26

www.qorvo.com

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