Datasheet > QM3007K

QM3007K

更新时间： 2024-01-08 17:44:52

品牌	Logo	应用领域
TYSEMI		开关
页数	文件大小	规格书
2页	361K
描述
P-Ch 30V Fast Switching MOSFETs Advanced high cell density Trench technology

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QM3007K 数据手册

Product specification

QM3007K

P-Ch 30V Fast Switching MOSFETs

General Description

Product Summery

The QM3007K is the highest performance trench

P-ch MOSFETs with extreme high cell density ,

which provide excellent RDSON and gate charge

for most of the small power switching and load

switch applications.

BVDSS

RDSON

-30V

70mΩ

-3.2A

Applications

The QM3007K meet the RoHS and Green Product

requirement with full function reliability approved.

z High Frequency Point-of-Load Synchronous

Buck Converter for MB/NB/UMPC/VGA

z Networking DC-DC Power System

z Load Switch

Features

SOT23 Pin Configuration

z Advanced high cell density Trench technology

z Super Low Gate Charge

z Excellent CdV/dt effect decline

z Green Device Available

Absolute Maximum Ratings

Symbol

V_DS

Parameter

Rating

-30

Units

Drain-Source Voltage

V_GS

Gate-Source Voltage

±20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current, V_GS@ -10V¹

Pulsed Drain Current²

-3.2

-2.5

-13

P_D@T_A=25℃

T_STG

Total Power Dissipation³

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

R_θJA

Parameter

Typ.

---

Max.

125

Unit

℃/W

Thermal Resistance Junction-Ambient ¹

Thermal Resistance Junction-Case¹

R_θJC

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