生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PUFM-D7 |
Reach Compliance Code: | unknown | 风险等级: | 5.82 |
最大集电极电流 (IC): | 20 A | 配置: | COMPLEX |
最小直流电流增益 (hFE): | 75 | 最大降落时间(tf): | 2000 ns |
JESD-30 代码: | R-PUFM-D7 | 元件数量: | 2 |
端子数量: | 7 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 160 W | 认证状态: | Not Qualified |
子类别: | BIP General Purpose Power | 表面贴装: | NO |
端子形式: | SOLDER LUG | 端子位置: | UPPER |
晶体管元件材料: | SILICON | VCEsat-Max: | 2 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
QM20HA-HB | MITSUBISHI |
获取价格 |
Power Bipolar Transistor, 20A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MODULE- | |
QM20KD-HB | MITSUBISHI |
获取价格 |
MEDIUM POWER SWITCHING USE INSULATED TYPE | |
QM20TD-H | MITSUBISHI |
获取价格 |
MEDIUM POWER SWITCHING USE INSULATED TYPE | |
QM20TD-HB | MITSUBISHI |
获取价格 |
MEDIUM POWER SWITCHING USE INSULATED TYPE | |
QM20TG9B | ETC |
获取价格 |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 450V V(BR)CEO | 20A I(C) | |
QM20TG-9B | MITSUBISHI |
获取价格 |
MEDIUM POWER SWITCHING USE INSULATED TYPE | |
QM2220LCX-200.0M | PLETRONICS |
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XO, Clock, | |
QM2220LEV-200.0M | PLETRONICS |
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XO, Clock, | |
QM22246 | QORVO |
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WiFi Extractor Filter | |
QM22246EVB | QORVO |
获取价格 |
WiFi Extractor Filter |