Datasheet > QJ4004V4TP

QJ4004V4TP

更新时间： 2024-09-22 13:45:39

品牌	Logo	应用领域
力特 - LITTELFUSE		开关电机电源开关继电器可控硅
页数	文件大小	规格书
8页	807K
描述
这款4安培高温三端双向可控硅可应用于交流电源开关和相位控制，例如电机转速和温度调节控制、照明控制以及静态开关继电器。敏感型器件可确保数字控制电路所需的第一和第四象限的门极控制。标准型器件通常通

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QJ4004V4TP 数据手册

Thyristors

4 Amp High Temperature Sensitive & Standard Triacs

RoHS

LJxx04xx & QJxx04xx Series

Description

This 4 A HighTemperatureTriac solid state switch series is

designed for AC switching and phase control applications

such as motor speed and temperature modulation controls,

lighting controls, and static switching relays.

Sensitive type components guarantee gate control in

Quadrants I & IV needed for digital control circuitry.

Standard type components normally operate in Quadrants

I & III triggered from AC line.

Features & Beneﬁts

• RoHS Compliant

• No contacts to wear out

from reaction of switching

events

• 150°C maximum junction

temperature

Main Features

• Restricted (or limited) RFI

generation, depending on

activation point of

Symbol

I_T(RMS)

Value

Unit

• Voltage capability up to

600V

• Surge capability up to

48A at 60HZ half cycle

sine wave

V_DRM/V_RRM

I_{GT (Q1)}

400 or 600

10 to 25

• Requires only a small gate

activation pulse in each

half-cycle

• Solid-state switching

eliminates arcing or

contact bounce that

create voltage transients

• Halogen free and RoHS

compliant

Schematic Symbol

Applications

Typical applications are AC solid-state switches, power

tools, home/brown goods and white goods appliances.

MT2

MT1

Sensitive gateTriacs can be directly driven by

microprocessor or popular opto-couplers/isolators.

Internally constructed isolated packages are offered for

ease of heat sinking with highest isolation voltage.

Absolute Maximum Ratings — SensitiveTriacs (4 Quadrants)

Symbol

Parameter

Peak non-repetitive blocking voltage

Value

Unit

_DSM/V_RSM

Pw=100 μs

LJxx04Vy/LJxx04Dy

700

RMS on-state current

(full sine wave)

I_T(RMS)

T_C= 135 °C

f = 50 Hz

f = 60 Hz

t = 20 ms

Non repetitive surge peak on-state current

(full cycle, T_Jinitial = 25°C)

I_TSM

t = 16.7 ms

I²t

I²t Value for fusing

t_p= 8.3 ms

9.5

A²s

Critical rate of rise of on-state current

(I_G= 50mA with ≤ 0.1μs rise time)

di/dt

f = 60 Hz

A/μs

T_J= 150 °C

I_GTM

P_G(AV)

T_stg

T_J

Peak gate trigger current

Average gate power dissipation

Storage temperature range

t_p≤ 10 μs

1.2

T_J= 150 °C

0.3

°C

-40 to 150

Operating junction temperature range

Note: xx=voltage/10, y = sensitivity

LJxx04xx & QJxx04xx Series

Speciﬁcations are subject to change without notice.

Revised: 04/23/18

12 3 4 5 6 7 8

中文翻译

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