QH8JB5
ꢀꢀ-40V Pch+Pch Small Signal MOSFET
Datasheet
ꢀꢀ
lOutline
ꢀ
VDSS
-40V
41mΩ
±5.0A
1.5W
RDS(on)(Max.)
TSMT8
ID
ꢀ
PD
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
llFeatures
1) Low on - resistance
llInner circuit
2) Small surface mount package(TSMT8)
3) Pb-free plating ; RoHS compliant
4) Halogen Free
llPackaging specifications
Packing
Embossed
Tape
llApplication
Reel size (mm)
180
8
Switching
Tape width (mm)
Quantity (pcs)
Taping code
Marking
Type
3000
TCR
JB5
llAbsolute maximum ratings (T = 25°C ,unless otherwise specified) <Tr1 and Tr2>
a
Parameter
Drain - Source voltage
Symbol
VDSS
ID
Value
-40
Unit
V
Continuous drain current
Pulsed drain current
±5.0
±20
±20
-5.0
2.0
A
*1
IDP
A
VGSS
Gate - Source voltage
V
*2
IAS
Avalanche current, single pulse
Avalanche energy, single pulse
A
*2
EAS
mJ
*3
PD
1.5
Power dissipation (total)
W
*4
PD
1.1
Tj
Junction temperature
150
℃
℃
Tstg
Operating junction and storage temperature range
-55 to +150
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