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QEE113E3R0 PDF预览

QEE113E3R0

更新时间: 2024-01-16 01:54:25
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管
页数 文件大小 规格书
7页 291K
描述
GaAs 红外发光二极管

QEE113E3R0 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:PLASTIC PACKAGE-2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.40.20.00
Factory Lead Time:4 weeks风险等级:0.6
Is Samacsys:N其他特性:SIDE VIEW
配置:SINGLE最大正向电流:0.05 A
最大正向电压:1.5 VJESD-609代码:e3
安装特点:THROUGH HOLE MOUNT功能数量:1
最高工作温度:100 °C最低工作温度:-40 °C
光电设备类型:INFRARED LED峰值波长:940 nm
最大反向电压:5 V形状:ROUND
尺寸:1.65 mm子类别:Infrared LEDs
表面贴装:NO端子面层:Tin (Sn)
视角:50 degBase Number Matches:1

QEE113E3R0 数据手册

 浏览型号QEE113E3R0的Datasheet PDF文件第2页浏览型号QEE113E3R0的Datasheet PDF文件第3页浏览型号QEE113E3R0的Datasheet PDF文件第4页浏览型号QEE113E3R0的Datasheet PDF文件第5页浏览型号QEE113E3R0的Datasheet PDF文件第6页浏览型号QEE113E3R0的Datasheet PDF文件第7页 
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