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QCA150A60 PDF预览

QCA150A60

更新时间: 2024-02-20 19:44:47
品牌 Logo 应用领域
SANREX 晶体晶体管功率双极晶体管
页数 文件大小 规格书
2页 115K
描述
TRANSISTOR MODULE

QCA150A60 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.75
Is Samacsys:N最大集电极电流 (IC):150 A
最小直流电流增益 (hFE):75最大降落时间(tf):3000 ns
元件数量:1最高工作温度:150 °C
最大功率耗散 (Abs):690 W最大上升时间(tr):2000 ns
子类别:BIP General Purpose PowerVCEsat-Max:2 V
Base Number Matches:1

QCA150A60 数据手册

 浏览型号QCA150A60的Datasheet PDF文件第2页 
TRANSISTOR MODULE  
QCA150A/QBB150A40/60  
UL;E76102M)  
QCA150A and QBB150A is a dual Darlington power  
102.0max  
63.0±0.2  
95max  
80±0.25  
transistor module with two high speed, high power  
6-M5  
(3.015.8 15.8 15.8 15.8 15.8  
23  
23  
4φ5.5  
Darlington transistors. Each transistor has a reverse  
paralleled fast recovery diode.  
C2  
E1  
E2  
C1  
B
2
X
X
QCA150ASeries-connected type  
B
1
QBB150ASeparate Type  
IC150A, VCEX400/600V  
Low saturation voltage for higher efficiency.  
Isolated mounting base  
(1.5)  
3.4  
10.5  
4-φ5.4  
M5×10  
110Tab  
NAME PLATE  
EBO  
V
10V for faster switching speed.  
QCA  
QBB  
E2  
B2 C2 E1  
B1 C1  
E2  
B2X B2 C2E1  
B1 C1  
Applications)  
Motor ControlVVVF, AC/DC Servo, UPS,  
Switching Power Supply, Ultrasonic Application  
UnitA  
Maximum Ratings  
Tj25unless otherwise specified)  
Ratings  
QCA150A40 QCA150A60  
QBB150A40 QBB150A60  
Symbol  
Item  
Conditions  
Unit  
VCBO  
VCEX  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
400  
400  
600  
600  
V
V
VBE=-2V  
pw1ms  
10  
V
A
150300)  
150  
Reverse Collector Current  
Base Current  
A
IC  
B
I
9
A
T
P
Total power dissipation  
Junction Temperature  
Storage Temperature  
Isolation Voltage  
690  
W
V
TC25℃  
j
T
40 to 150  
40 to 125  
2500  
Tstg  
VISO  
A.C.1minute  
MountingM5)  
TerminalM5)  
Recommended Value 1.5  
Recommended Value 1.5  
Typical Value  
-
-
2.515  
2.515  
-
-
25)  
25)  
2.728)  
2.728)  
370/340  
Mounting  
Torque  
Nm  
(fB)  
Mass  
QCA150A/QBB150A  
g
Electrical Characteristics  
Ratings  
Symbol  
Item  
Conditions  
Unit  
Min.  
Max.  
ICBO  
IEBO  
Collector Cut-off Current  
Emitter Cut-off Current  
CB  
CBO  
1.0  
mA  
mA  
V
V  
EB  
V V  
EBO  
500  
QCA150A40  
QBB150A40  
QCA150A60  
QBB150A60  
QCA150A40  
QBB150A40  
QCA150A60  
QBB150A60  
300  
450  
400  
CEOSUS)  
V
V
V
Ic1A  
Collector Emitter  
Sustaning Voltage  
CEXSUS)  
V
B2  
Ic30AI =-5A  
600  
FE  
h
DC Current Gain  
CE  
Ic150AV 2V/5V  
75/100  
VCE(sat)  
BE(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
On Time  
B
2.0  
2.5  
V
V
Ic150AI 2.0A  
B
V
Ic150AI 2.0A  
ton  
ts  
2.0  
Vcc300VIc150A  
Switching Time  
Storage Time  
Fall Time  
12.0  
3.0  
μs  
B1  
B2  
I 2AI =-2A  
tf  
ECO  
V
Collector-Emitter Reverse Voltage  
1.4  
V
Ic150A  
Rth(j-c)  
Thermal Impedance (junction to case)  
Transistor partDiode part  
0.18/0.6  
/W  
SanRex  
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com  

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