Datasheet > Q65210-L101

Q65210-L101

更新时间： 2024-09-22 22:25:47

品牌	Logo	应用领域
英飞凌 - INFINEON		传感器
页数	文件大小	规格书
5页	174K
描述
Differential Magnetoresistive Sensor

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Q65210-L101 数据手册

Differential Magnetoresistive Sensor

FP 201 L 100

Features

• Extremely high output

voltage

• 2 independently biased

magnetic circuits

• Robust housing

• Signal amplitude

independent of operating

speed

• Screw mounting possible

Typical applications

• Detection of speed

• Detection of position

• Detection of sense of rotation

Dimensions in mm

Type

Ordering Code

FP 201 L 100

Q65210-L101

The differential magnetoresistive sensor FP 201 L 100 consists of two magnetically

biased magneto resistors made from L-type InSb/NiSb, which in their unbiased state

each have a basic resistance of about 125 Ω. They are series coupled as a voltage

divider and are encapsuled in plastic as protection against mechanical stresses. This

magnetically actuated sensor can be implemented as a direction dependent contactless

switch where it shows a voltage change of about 1.3 V/mm in its linear region.

Semiconductor Group

07.96

12 3 4 5

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