Datasheet > PZT5551Q

PZT5551Q

更新时间： 2024-09-15 15:19:27

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
5页	312K
描述
SOT-223

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中文翻译

获取价格

数据手册

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PZT5551Q 数据手册

RoHS

COMPLIANT

PZT5551Q

NPN Transistor

Features

● Epoxy meets UL-94 V-0 flammability rating

● High Voltage

● Moisture Sensitivity Level 1

Application

● High Voltage Amplifier Application

Mechanical Data

● Package: SOT-223

● Terminals: Tin plated leads, solderable per

J-STD-002 and JESD22-B102

● Marking: ZT5551

Equivalent circuit

■

Maximum Ratings (Ta=25℃unless otherwise noted)

■

Item

Symbol

V_CEO

V_CBO

V_EBO

I_C

Unit

Value

Minimum Collector-Emitter Voltage

Minimum Collector-Base Voltage

Minimum Emitter-Base Voltage

Collector Current

160

180

600

Power Dissipation ^(*)

P_D

Thermal Resistance From Junction To Ambient ^(*)

Operation Junction Temperature

Storage Temperature

R_θJA

T_j

125

℃/W

℃

-55 to +150

T_stg

℃

(*) Device mounted on FR-4 PCB, mounting pad for collector 1cm²

1 / 5

S-S4707

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.0,29-Sep-22

12 3 4 5

中文翻译

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