Datasheet > PZT5401

PZT5401

更新时间： 2024-10-02 10:19:15

品牌	Logo	应用领域
WEITRON		晶体晶体管光电二极管
页数	文件大小	规格书
4页	327K
描述
PNP Epitaxial Planar Transistor

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PZT5401 数据手册

PZT5401

PNP Epitaxial Planar Transistor

P b

COLLECTOR

2, 4

SOT-223

Lead(Pb)-Free

1. BASE

BASE

2.COLLECTOR

3.EMITTER

4.COLLECTOR

EM ITTER

ABSOLUTE MAXIMUM RATINGS

Rating

(T =25 C)

Symbol

Value

Unit

-160

Collector to Base Voltage

CBO

-150

-5

CEO

Collector to Emitter Voltage

Collector to Base Voltage

Collector Current

EBO

I (DC)

-600

1.5

Total Device Disspation T =25°C

˚C

+150

Junction Temperature

Storage Temperature

Tstg

-55 to +150

*Device mounted in a typical manner on a P.C.B with copper 4 inches x 4 inches(min).

ELECTRICAL CHARACTERISTICS

Characteristics

Collector-Base Breakdown Voltage

I =-100µA, I =0

Symbol

Min

Max

Unit

-160

CBO

CEO

EBO

Collector-Emitter Breakdown Voltage⁽¹⁾

I =-1mA, I =0

-150

-5

Emitter-Base Breakdown Voltage

I =-10µA, I =0

Collector Cut-Oꢀ Current

=-120V, I =0

-50

CBO

Emitter-Cut-Oꢀ Current

EBO

V =-3V, I =0

WEITRON

http://www.weitron.com.tw

1/4

14-Aug-07

12 3 4

中文翻译

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