Datasheet > PZ607UZ

PZ607UZ

更新时间： 2024-09-14 17:15:39

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
7页	482K
描述
SOT-363

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中文翻译

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数据手册

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PZ607UZ 数据手册

PZ607UZ

N- & P-Channel Enhancement Mode

Field Effect Transistor

NIKO-SEM

SOT-363

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSSR_DS(ON)

I_D

300mΩ

520mΩ

N-Channel

P-Channel

20V

0.78A

-0.53A

-20V

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

• ESD Protection − HBM Class : 1C.

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

G : GATE

D : DRAIN

S : SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

N-Channel P-Channel UNITS

±10

0.78

0.62

2.4

-20

±12

Gate-Source Voltage

V_GS

T_A= 25 °C

T_A= 70 °C

-0.53

-0.42

-1

Continuous Drain Current

Pulsed Drain Current¹

I_D

I_DM

T_A= 25 °C

T_A= 70 °C

0.31

0.2

0.25

0.16

Power Dissipation

P_D

Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

REV 1.2

I-27-1

12 3 4 5 6 7

中文翻译

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