Datasheet > PZ5203EMAA

PZ5203EMAA

更新时间： 2024-09-14 17:15:39

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	435K
描述
SOT-23(S)

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中文翻译

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数据手册

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PZ5203EMAA 数据手册

P-Channel Logic Level Enhancement

Mode Field Effect Transistor

PZ5203EMAA

SOT-23(S)

Halogen-Free & Lead-Free

NIKO-SEM

PRODUCT SUMMARY

V_(BR)DSS

-30V

R_DS(ON)

I_D

-2.8A

60mΩ

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

• Products Integrated ESD diode with ESD Protected up to 2KV.

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

G: GATE

D: DRAIN

S: SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ° C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

-30

UNITS

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current¹

Power Dissipation

V_GS

±20

T_A= 25 ° C

T_A= 70 ° C

-2.8

I_D

I_DM

-2.2

-20

T_A= 25 ° C

T_A= 70 ° C

0.8

P_D

0.5

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

° C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Ambient²

SYMBOL

R_JA

TYPICAL

MAXIMUM

162

UNITS

° C/W

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C. The value in any given application depends on the user's specific board design.

REV 1.0

H-23-5

12 3 4

中文翻译

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