Datasheet > PZ509BA

PZ509BA

更新时间： 2024-09-14 17:15:39

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	328K
描述
SOT-323

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中文翻译

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数据手册

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PZ509BA 数据手册

P-Channel Enhancement Mode

Field Effect Transistor

PZ509BA

NIKO-SEM

SOT-323

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

-30V

R_DS(ON)

I_D

-1.2A

135mΩ

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

G. GATE

D. DRAIN

S. SOURCE

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications.

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Gate-Source Voltage

SYMBOL

LIMITS

±20

UNITS

V_GS

T_A= 25 °C

T_A= 70 °C

-1.2

Continuous Drain Current

Pulsed Drain Current¹

Power Dissipation

I_D

I_DM

-0.9

-5.2

T_A= 25 °C

T_A= 70 °C

0.3

P_D

0.2

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Ambient²

SYMBOL

R_JA

TYPICAL

MAXIMUM

360

UNITS

°C/W

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper.

F-20-3

REV 1.0

12 3 4

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