Datasheet > PZ28F064M29EWTA

PZ28F064M29EWTA

更新时间： 2024-10-03 14:59:03

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
87页	1118K
描述
(x8/x16), 3V, Single Bit Per Cell, Page Read, Parallel NOR Flash Memory

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

PZ28F064M29EWTA 数据手册

32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash

Features

Parallel NOR Flash Embedded Memory

JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX

PC28F064M29EWXX; JR28F064M29EWXX; PZ28F064M29EWXX

JS28F128M29EWXX; PC28F128M29EWXX; RC28F128M29EWXX

• V_PP/WP# pin protection

– V_PPHvoltage on V_PPto accelerate programming

Features

• Supply voltage

– V_CC= 2.7–3.6V (program, erase, read)

– V_CCQ= 1.65–3.6V (I/O buffers)

• Asynchronous random or page read

– Page size: 8 words or 16 bytes

performance

– Protects highest/lowest block (H/L uniform) or

top/bottom two blocks (T/B boot)

• Software protection

– Volatile protection

– Nonvolatile protection

– Page access: 25ns

– Random access: 60ns (BGA); 70ns (TSOP)

• Buffer program: 256-word MAX program buffer

• Program time

– Password protection

– Password access

• Extended memory block

– 0.56µs per byte (1.8 MB/s TYP when using 256-

word buffer size in buffer program without V_PPH

– 0.31µs per byte (3.2 MB/s TYP when using 256-

– 128-word (256-byte) block for permanent secure

identification

– Program or lock implemented at the factory or by

the customer

• Low-power consumption: Standby mode

• JESD47H-compliant

– 100,000 minimum ERASE cycles per block

– Data retention: 20 years (TYP)

• 65nm single-bit cell process technology

• Packages (JEDEC-standard)

– 56-pin TSOP (128Mb, 64Mb)

– 48-pin TSOP (64Mb, 32Mb)

– 64-ball FBGA (128Mb, 64Mb)

– 48-ball BGA (64Mb, 32Mb)

• Green packages available

– RoHS-compliant

)

word buffer size in buffer program with V_PPH

• Memory organization

)

– 32Mb: 64 main blocks, 64KB each, or eight 8KB

boot blocks (top or bottom) and 63 main blocks,

64KB each

– 64Mb: 128 main blocks, 64KB each, or eight 8KB

boot blocks (top or bottom) and 127 main blocks,

64 KB each

– 128Mb: 128 main blocks, 128KB each

• Program/erase controller

– Embedded byte/word program algorithms

• Program/erase suspend and resume capability

– READ operation on any block during a PRO-

GRAM SUSPEND operation

– Halogen-free

– READ or PROGRAM operation on one block dur-

ing an ERASE SUSPEND operation on another

block

• Operating temperature

– Ambient: –40°C to +85°C

• BLANK CHECK operation to verify an erased block

• Unlock bypass, block erase, chip erase, and write to

buffer capability

– Fast buffered/batch programming

– Fast block and chip erase

PDF: 09005aef84dc44a7

m29ew_32Mb-128Mb.pdf - Rev. B 11/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...87

中文翻译

下载PDF

与PZ28F064M29EWTA相关器件

型号	品牌	获取价格	描述	数据表
PZ28F064M29EWTX	MICRON	获取价格	Parallel NOR Flash Embedded Memory
PZ28F064M29EWXX	MICRON	获取价格	Parallel NOR Flash Embedded Memory
Pz29	CTS	获取价格	Soft PZT
PZ2N7002M	NIKOSEM	获取价格	SOT-23(S)
PZ-30	NIDEC	获取价格	PRESSURE INDICATOR
PZ-30_16	NIDEC	获取价格	PRESSURE INDICATORS
PZ3032	NXP	获取价格	32 macrocell CPLD
PZ3032-10(TBD)	ETC	获取价格	ASIC
PZ3032-10A44	NXP	获取价格	32 macrocell CPLD
PZ3032-10A44	XILINX	获取价格	EE PLD, 10ns, 32-Cell, CMOS, PQCC44

与PZ28F064M29EWTA相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

38
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

32
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

29
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

40

产品中心

服务支持

精选活动

关于我们

帮助中心

PZ28F064M29EWTA

PZ28F064M29EWTA 数据手册

与PZ28F064M29EWTA相关器件

与PZ28F064M29EWTA相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

PZ28F064M29EWTA

PZ28F064M29EWTA 数据手册

与PZ28F064M29EWTA相关器件

与PZ28F064M29EWTA相关文章

您还可以找

您在本页遇到什么问题？