是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | DIP |
包装说明: | 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-28 | 针数: | 28 |
Reach Compliance Code: | compliant | ECCN代码: | 3A001.A.2.C |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.26 |
最长访问时间: | 350 ns | JESD-30 代码: | R-CDIP-T28 |
JESD-609代码: | e0 | 内存密度: | 65536 bit |
内存集成电路类型: | EEPROM | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 28 |
字数: | 8192 words | 字数代码: | 8000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 组织: | 8KX8 |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装代码: | DIP |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
编程电压: | 5 V | 认证状态: | Not Qualified |
座面最大高度: | 5.8928 mm | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | MILITARY | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 15.24 mm | 最长写入周期时间 (tWC): | 10 ms |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PYX28C64X-35CWMB | PYRAMID |
获取价格 |
8K x 8 EEPROM | |
PYX28C64X-35L32M | PYRAMID |
获取价格 |
8K x 8 EEPROM | |
PYX28C64X-35L32MB | PYRAMID |
获取价格 |
8K x 8 EEPROM | |
PYX28HC64 | PYRAMID |
获取价格 |
Access Times of 70, 90, and 120ns Software Data Protection | |
PYX28HC64-12CWM | PYRAMID |
获取价格 |
Access Times of 70, 90, and 120ns Software Data Protection | |
PYX28HC64-12CWMB | PYRAMID |
获取价格 |
Access Times of 70, 90, and 120ns Software Data Protection | |
PYX28HC64-12L32M | PYRAMID |
获取价格 |
Access Times of 70, 90, and 120ns Software Data Protection | |
PYX28HC64-12L32MB | PYRAMID |
获取价格 |
Access Times of 70, 90, and 120ns Software Data Protection | |
PYX28HC64-70CWM | PYRAMID |
获取价格 |
Access Times of 70, 90, and 120ns Software Data Protection | |
PYX28HC64-70CWMB | PYRAMID |
获取价格 |
Access Times of 70, 90, and 120ns Software Data Protection |