Datasheet > PYA28C16-20LM

PYA28C16-20LM

更新时间： 2024-09-24 00:37:51

品牌	Logo	应用领域
PYRAMID		可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数	文件大小	规格书
10页	667K
描述
Access Times of 150, 200, 250 and 350ns Single 5VÂ±10% Power Supply

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PYA28C16-20LM 技术参数

PYA28C16

2K X 8 EEPROM

FEATURES

Access Times of 150, 200, 250 and 350ns

Single 5V±10% Power Supply

Endurance:

- 10,000 Write Cycles

- 100,000 Write Cycles (optional)

Fast Byte Write (200µs or 1 ms)

Data Retention: 10 Years

Available in the following package:

– 24-Pin 600 mil Ceramic DIP

– 32-Pin Ceramic LCC (450x550 mils)

Low Power CMOS:

- 60 mA Active Current

- 150 µA Standby Current

Fast Write Cycle Time - DATA Polling

CMOS & TTL Compatible Inputs and Outputs

PIN CONFIGURATIONS

DESCRIPTION

ThePYA28C16isa5Volt2Kx8EEPROM. ThePYA28C16

is a 16K memory organized as 2,048 words by 8 bits. Data

Retention is 10 Years. The device is available in a 24-Pin

600 mil wide Ceramic DIP and 32-Pin LCC.

DIP (C12)

FUNCTIONAL BLOCK DIAGRAM

LCC (L6)

Document # EEPROM108 REV A

Revised July 2012

12 3 4 5 6 7...10

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型号	品牌	获取价格	描述	数据表
PYA28C16-20LMB	PYRAMID	获取价格	Access Times of 150, 200, 250 and 350ns Singl
PYA28C16-25CWM	PYRAMID	获取价格	Access Times of 150, 200, 250 and 350ns Singl
PYA28C16-25CWMB	PYRAMID	获取价格	Access Times of 150, 200, 250 and 350ns Singl
PYA28C16-25LM	PYRAMID	获取价格	Access Times of 150, 200, 250 and 350ns Singl
PYA28C16-25LMB	PYRAMID	获取价格	Access Times of 150, 200, 250 and 350ns Singl
PYA28C16-35CWM	PYRAMID	获取价格	Access Times of 150, 200, 250 and 350ns Singl
PYA28C16-35CWMB	PYRAMID	获取价格	Access Times of 150, 200, 250 and 350ns Singl
PYA28C16-35LM	PYRAMID	获取价格	Access Times of 150, 200, 250 and 350ns Singl
PYA28C16-35LMB	PYRAMID	获取价格	Access Times of 150, 200, 250 and 350ns Singl
PYA28C16B	PYRAMID	获取价格	Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum