Datasheet > PYA28C010-12LM

PYA28C010-12LM

更新时间： 2024-11-10 00:37:51

品牌	Logo	应用领域
PYRAMID		/
页数	文件大小	规格书
15页	904K
描述
Access Times of 120, 150, 200, and 250ns Single 5VÂ±10% Power Supply

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数据手册

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PYA28C010-12LM 数据手册

PYA28C010

128K x 8 EEPROM

FEATURES

Access Times of 120, 150, 200, and 250ns

Single 5V±10% Power Supply

Software Data Protection

Fully TTL Compatible Inputs and Outputs

Endurance:

- 10,000 Cycles/byte

- 100,000 Cycles/page

Simple Byte and Page Write

Low Power CMOS:

- 60 mA Active Current

- 500 µA Standby Current

Data Retention: 100 Years

Available in the following package:

– 32-Pin 600 mil Ceramic DIP

Fast Write Cycle Times

– 32-Pin Ceramic LCC (450x550 mils)

– 32-Pin Solder Seal Flatpack

– 44-Pin Ceramic LCC (650x650 mils)

DESCRIPTIOꢀ

The PYA28C010 is a 5 Volt 128Kx8 EEPROM using ﬂoat-

ing gate CMOS Technology. The device supports 64-byte

pagewriteoperation. ThePYA28C010featuresDATAand

Toggle Bit Polling as well as a system software scheme

used to indicate early completion of a Write Cycle. The

devicealsoincludesuser-optionalsoftwaredataprotection.

Data Retention is 100 Years. The device is available in

a 32-Pin 600 mil wide Ceramic DIP, 32-Pin LCC, 32-Pin

Solder Seal Flatpack and 44-Pin Ceramic LCC.

FUꢀCTIOꢀAL BLOCꢁ DIAꢂRAM

PIꢀ COꢀFIꢂURATIOꢀ

DIP (C10)

LCC (L6)

Document # EEPROM103 REV 03

Revised July 2014

12 3 4 5 6 7...15

中文翻译

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PYA28C010-15LM	PYRAMID	获取价格	Access Times of 120, 150, 200, and 250ns Sing
PYA28C010-15LMB	PYRAMID	获取价格	Access Times of 120, 150, 200, and 250ns Sing
PYA28C010-20CWM	PYRAMID	获取价格	Access Times of 120, 150, 200, and 250ns Sing