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PY291A-25DM PDF预览

PY291A-25DM

更新时间: 2024-11-18 03:40:31
品牌 Logo 应用领域
PYRAMID 可编程只读存储器
页数 文件大小 规格书
9页 101K
描述
2K X 8 REPROGRAMMABLE PROM

PY291A-25DM 数据手册

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PY291A  
2K X 8 REPROGRAMMABLE PROM  
FEATURES  
Windowed devices for reprogramming  
EPROM Technology for reprogramming  
Fully TTL Compatible Inputs and Outputs  
Standard Pinout (JEDEC Approved)  
High Speed  
– 20/25/35/50 ns (Commercial)  
– 35/50 ns (Military)  
– 24-Pin 300 mil DIP  
Low Power Operation: 660 mW  
Single 5V±10% Power Supply  
– Windowed CERDIP  
– Non-Windowed CERDIP  
– Non-Windowed Plastic DIP  
DESCRIPTION  
To perform a read operation from the device, CS1 is  
LOW and CS2 and CS3 are HIGH. The memory contents  
intheaddressestablishedbytheAddresspins(A0 toA10)  
will become available on the outputs (O0 to O7).  
The PY291A is a 2Kx8 CMOS PROM. The device is  
availableinwindowedpackageswhichwhenexposedto  
UVlight,thememorycontentinthePROMiserasedand  
can be reprogrammed. EPROM technology is used in  
the memory cells for programming. The EPROM re-  
quires a 12.5V for programming. Devices are tested to  
insure that performance of the device meets the DC and  
AC specification limits after customer programming.  
ThePY291Aisavailablein24-pin300milCeramicDIPs  
(CERDIP, Windowed and Non-Windowed) and Plastic  
DIPs (Non-Windowed).  
FUNCTIONAL BLOCK DIAGRAM  
PIN CONFIGURATION  
DIP (P4, D4, WD1)  
Note: Window on WD1 package only  
Document # EPROM101 REV OR  
Revised June 2007  
1

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