Datasheet > PXFC191507FC-V1

PXFC191507FC-V1

更新时间： 2024-09-21 17:01:39

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
8页	475K
描述
High Power RF LDMOS FET 150 W; 28 V; 1805 - 1990 MHz

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PXFC191507FC-V1 数据手册

PXFC191507FC

Thermally-Enhanced High Power RF LDMOS FET

150 W, 28 V, 1805 – 1990 MHz

Description

PXFC191507FC

Package H-37248G-4/2

The PXFC191507FC is a 150-watt LDMOS FET intended for use

in multi-standard cellular power ampliﬁer applications in the 1805

to 1990 MHz frequency band. Features include input and output

matching, high gain and thermally-enhanced package with earless

ﬂanges. Manufactured with an advanced LDMOS process, this de-

vice provides excellent thermal performance and superior reliability.

Features

Two-carrier WCDMA Drive-up

V_DD= 28 V, I_DQ= 960 mA, V_GS= 2.65 V,

ƒ = 1990 MHz, 3GPP WCDMA signal,

PAR = 8 dB, 10 MHz carrier spacing,

BW 3.84 MHz

•

Broadband internal input and output matching

Typical Pulsed CW performance, 1990 MHz, 28 V,

10 µs pulse width, 10% duty cycle, class AB test

- Output power at P

- Efﬁciency = 54%

- Gain = 19.5 dB

= 140 W

1dB

Gain

•

Typical single-carrier WCDMA performance,

1990 MHz, 28 V, 10 dB PAR @ 0.01% CCDF, Test

Model 1 with 16DPCH

- Output power = 32 W avg

- Efﬁciency = 34%

- Gain = 20 dB

- ACPR = –31 dBc@ 5 MHz

Efficiency

•

Capable of handling 10:1 VSWR @28 V, 150 W

(CW) output power

Integrated ESD protection : Human Body Model,

Class 1C (per JESD22-A114)

c191507fc_g1

•

Low thermal resistance

Output Power (dBm)

•

Pb-free and RoHS compliant

RF Characteristics

Two-carrier WCDMA Speciﬁcations (tested in the production test ﬁxture)

= 28 V, I = 960 mA, P = 32 W avg, ƒ = 1980 MHz, ƒ = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,

OUT

peak/average = 8 dB @ 0.01% CCDF

Characteristic

Gain

Symbol

Min

Typ

20.5

Max

—

Unit

Drain Efﬁciency

Intermodulation Distortion

h_D

—

IMD

—

–33

–31

dBc

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 04, 2023-06-28

For further information and support please visit:

https://www.macom.com/support

12 3 4 5 6 7 8

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与PXFC191507FC-V1相关器件

型号	品牌	获取价格	描述	数据表
PXFC191507FCV1R0	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 15
PXFC191507FCV1R0XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 15
PXFC191507FCV1R250	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 15
PXFC191507FCV1R250XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 15
PXFC192207FH	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET
PXFC192207FH	CREE	获取价格	Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 - 1990 MHz
PXFC192207FH_16	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 22
PXFC192207FHV3R0	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 22
PXFC192207FHV3R0XTMA1	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 22
PXFC192207FHV3R250	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FET 22

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