Datasheet > PWD13F60

PWD13F60

更新时间： 2024-10-01 14:58:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅极驱动高压驱动器
页数	文件大小	规格书
26页	751K
描述
高密度功率驱动器 - 高压全桥与集成式栅极驱动器

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PWD13F60 数据手册

PWD13F60

High-density power driver -

high voltage full bridge with integrated gate driver

Datasheet - production data

Applications

 Motor drivers for industrial and home

appliances

 Factory automation

 Fans and pumps

 HID, ballasts

 Power supply units

 DC-DC and DC-AC converters

Description

The PWD13F60 is a high-density power driver

integrating gate drivers and four N-channel power

MOSFETs in dual half bridge configuration.

VFQFPN 10 x 13 x 1.0 mm

The integrated power MOSFETs have low R

DS(on)

of 320 mΩ and 600 V drain-source breakdown

voltage, while the embedded gate drivers high

side can be easily supplied by the integrated

bootstrap diode. The high integration of the

device allows to efficiently drive loads in a tiny

space.

Features

 Power system-in-package integrating gate

drivers and high-voltage power MOSFETs

– Low R

= 320 mΩ

= 600 V

DS(on)

The PWD13F60 device accepts a supply voltage

– BV

DSS

(V ) extending over a wide range and is

 Suitable for operating as

– Full bridge

protected by means of low-voltage UVLO

detection on the supply voltage.

– Dual independent half bridges

The input pins extended range allows an easy

interfacing with microcontrollers, DSP units or

Hall effect sensors.

 Wide driver supply voltage down to 6.5 V

 UVLO protection on supply voltage

The device is available in a compact VFQFPN

package.

 3.3 V to 15 V compatible inputs with hysteresis

and pull-down

 Interlocking function to prevent cross

conduction

 Internal bootstrap diode

 Outputs in phase with inputs

 Very compact and simplified layout

 Flexible, easy and fast design

November 2017

DocID030865 Rev 2

1/26

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...26

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