Datasheet > PWB80A40

PWB80A40

更新时间： 2022-11-19 23:41:15

品牌	Logo	应用领域
NAINA		/
页数	文件大小	规格书
2页	113K
描述
Non-isolated Thyristor Module

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PWB80A40 数据手册

80NT3

Naina Semiconductor Ltd.

Non-isolated Thyristor Module

Features

•

Low voltage three-phase

High surge current of 2500A @ 60Hz

Easy construction

Non-isolated

Mounting base as common anode

Voltage Ratings (T_C= 25^OC unless otherwise specified)

Parameter

Symbol

Values

Units

Maximum repetitive peak

reverse voltage

V_RRM

300

Maximum non-repetitive

peak reverse voltage

V_RSM

V_DRM

360

300

Maximum repetitive peak

off-state voltage

NT3

Electrical Characteristics (T_C= 25^OC unless otherwise specified)

Parameter

Conditions

Symbol

I_T(AV)

Values

Units

Single phase, half-wave, 180⁰

Average on-state current

R.M.S. on-state current

conduction @ T_C= 116⁰C

I_T(RMS)

125

half cycle, 50Hz/60Hz, peak value,

non-repetitive

On-state surge current

I_TSM

2280

I²t required for fusing

I²t

26000

A²S

Peak gate power dissipation

Average gate power dissipation

Peak gate current

P_GM

P_GM(AV)

I_GM

Peak gate voltage (forward)

Peak gate voltage (reverse)

VFGM

VRGM

I₀= 200mA, V₀= ½ V_DRM, dI_G/dt = 1

A/µs

Critical rate of rise of on-state current

di/dt

A/µs

T_J= 150⁰C, V₀= ^2/3V_DRM, exponential

wave

Critical rate of rise of off-state voltage

Holding current

dv/dt

I_H

V/µs

100

Thermal & Mechanical Specifications (T_C= 25^OC unless otherwise specified)

Parameter

Symbol

T_J

Values

Units

⁰C

Operating junction temperature range

Storage temperature range

Thermal resistance, junction to case

-30 to +150

-30 to +125

0.35

T_STG

R_th(JC)

⁰C/W

D-95, Sector 63, Noida – 201301, India

•

Tel: 0120-4205450

•

Fax: 0120-4273653

sales@nainasemi.com

•

www.nainasemi.com

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