(NON-ISOLATED TYPE)
THYRISTOR MODULE
PWB130A
PWB130A is a Thyristor module suitable for low voltage, 3 phase recifier applications.
●
T(AV)
I
130A (each device)
93.5max
● high Surge Current 3500 A (50/60Hz)
● Easy Construction
2-φ6.5
80
K2
2
K3
3
K2
G2
K1
1
● Non-isolated. Mounting base as common Anode terminal
K1G1
G3 K3
16.5
23
23
3-M5
(Applications)
Welding power Supply
Various DC power Supply
6-♯110TAB
K3
K2
K1 K2
2
3
1
G2
K1G1
G3 K3
A
Unit:
A
■Maximum Ratings
Ratings
PWB130A30
300
Symbol
Item
Unit
PWB130A20
PWB130A40
RRM
V
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
200
240
200
400
480
400
V
V
V
RSM
V
360
DRM
V
300
Symbol
Item
Conditions
Ratings
130
Unit
A
T(AV)
I
Average On-State Current
R.M.S. On-State Current
Surge On-State Current
Single phase, half wave, 180°conduction, Tc:112℃
T(RMS)
I
204
A
Single phase, half wave, 180°conduction, Tc:112℃
1
TSM
I
A
/cycle, 50Hz/60Hz, peak value, non-repetitive
3200 3500
/
2
2
2
2
I t
I t
51000
A S
GM
P
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
10
W
W
A
G(AV)
P
1
FGM
I
3
10
FGM
V
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of On-State Current
Operating Junction Temperature
Storage Temperature
V
RGM
V
5
V
1
G
D
DRM
G
50
di dt
/
I =200mA,Tj=25℃,V =
/
2V ,dI dt=1A μs
A μs
/
/
/
Tj
-30 to +150
-30 to +125
4.7(48)
2.7(28)
170
℃
℃
Tstg
Mounting(M6) Recommended 2.5-3.9(25-40)
Terminal(M5) Recommended 1.5-2.5(15-25)
Mounting
torque
N・m
(kgf・B)
Mass
g
■Electrical Characteristics
Ratings
Symbol
Item
Conditions
at V , single phase, half wave, Tj=150℃
Unit
Mix. Typ. Min.
DRM
I
Repetitive Peak Off-State Current, max.
Repetitive Peak Reverse Current, max.
Peak On-State Voltage, max.
Gate Trigger Current, max.
Gate Trigger Voltage, max.
Non-Trigger Gate, Voltage. min.
DRM
30
mA
mA
V
RRM
I
DRM
30
at V , single phase, half wave, Tj=150℃
TM
V
1.2
On-State Current 410A, Tj=150℃ Inst. measurement
GT
I
T
D
150
Tj=25℃,I =1A,V =6V
mA V
/
GT
V
T
D
2
Tj=25℃,I =1A,V =6V
mA V
/
1
GD
V
D
DRM
0.25
V
Tj=150℃,V =/V
2
T
G
I =100A,I =200mA,Tj=25℃,
tgt
Turn On Time, max.
10
μs
1
D
DRM
G
/
V =/V ,dI dt=1A μs
/
2
2
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
D
DRM
50
70
0.2
dv dt
Tj=150℃,V =/V ,Exponential wave.
V μs
/
/
3
H
I
mA
Tj=25℃
Thermal Impedance, max.
Rth(j-c)
Junction to case(1/Module)
℃ W
/
3
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com