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PVR1301 PDF预览

PVR1301

更新时间: 2024-02-15 04:46:09
品牌 Logo 应用领域
英飞凌 - INFINEON 继电器
页数 文件大小 规格书
6页 84K
描述
BOSFET PHOTOVOLTAIC RELAY DUAL - POLE 400MA 0-100V AC/DC

PVR1301 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:LEAD FREE, MINIATURE, DIP-16
Reach Compliance Code:unknownHTS代码:8541.40.95.00
风险等级:5.21Is Samacsys:N
配置:SINGLE最大正向电流:0.025 A
最大绝缘电压:1500 VJESD-609代码:e3
元件数量:2最大通态电流:0.36 A
最大通态电阻:3 Ω最高工作温度:85 °C
最低工作温度:-40 °C光电设备类型:TRANSISTOR OUTPUT SSR
端子面层:Matte Tin (Sn)Base Number Matches:1

PVR1301 数据手册

 浏览型号PVR1301的Datasheet PDF文件第2页浏览型号PVR1301的Datasheet PDF文件第3页浏览型号PVR1301的Datasheet PDF文件第4页浏览型号PVR1301的Datasheet PDF文件第5页浏览型号PVR1301的Datasheet PDF文件第6页 
Data Sheet No. PD 10027D  
Replaced by PVR13N  
Series PVR13  
Microelectronic Power IC  
BOSFET® Photovoltaic Relay  
Dual-Pole, 400mA, 0-100V AC/DC  
General Description  
Features  
The PVR13 Photovoltaic Relay is a dual-pole, normally  
open solid state replacement for electro-mechanical  
relays. It utilizes as an output switch a unique  
bidirectional (AC or DC) MOSFET power IC termed  
a BOSFET. The BOSFET is controlled by a photo-  
voltaic generator of novel construction, which is  
energized by radiation from a dielectrically isolated  
light emitting diode (LED).  
BOSFET Power IC n  
1010 Operations n  
300µsec Operating Time n  
0.2µVolt Thermal Offset n  
5 milliwatts Pick-Up Power n  
1000V/µsec dv/dt n  
The PVR overcomes the limitations of reed relays by  
offering the solid state advantages of long life, high  
operating speed, low pick-up power, bounce-free  
operation, low thermal voltages and miniaturization.  
These advantages allow product improvement and  
design innovations in many applications such as  
process control, multiplexing, telecommunications,  
automatic test equipment and data acquisition.  
The PVR can switch analog signals from thermo-  
couple level to 100 volts peak AC or DC polarity.  
Signal frequencies into the RF range are easily  
controlled and switching rates up to 5kHz are achiev-  
able. The extremely small thermally generated offset  
voltages allow increased measurement accuracies.  
Unique silicon technology developed by International  
Rectifier forms the heart of the PVR. The monolithic  
BOSFET contains a bidirectional N-channel power  
MOSFET output structure. In addition, this power IC  
chip has input circuitry for fast turn-off and gate  
protection functions.This section of the BOSFET chip  
utilizes both bipolar and MOS technology to form  
NPN transistors, P-channel MOSFETs, resistors,  
diodes and capacitors.  
Bounce-Free n  
16-pin DIP Package n  
-40°C to 85°C n  
Part Identification  
Part Number  
Operating  
Off-State  
Resistance  
108 Ohms  
The photovoltaic generator similarly utilizes a unique  
International Rectifier alloyed multijunction structure.  
The excellent current conversion efficiency of this  
technique results in the very fast response of the  
PVR microelectronic power IC relay.  
Voltage (AC/DC)  
PVR1300  
PVR1301  
0 – 100V  
1010 Ohms  
This advanced semiconductor technology has cre-  
ated a radically new control device. Designers can  
now develop switching systems to new standards of  
electrical performance and mechanical compactness.  
(BOSFET is a trademark of International Rectifier)  

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