PV6A8BA
SOP-8
Halogen-Free & Lead-Free
N-Channel Enhancement Mode
Field Effect Transistor
NIKO-SEM
D
PRODUCT SUMMARY
V(BR)DSS
40V
RDS(ON)
ID
G
12.4A
7mΩ
G: GATE
D: DRAIN
S: SOURCE
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
SYMBOL
VDS
LIMITS
40
UNITS
V
V
Gate-Source Voltage
VGS
±20
TA = 25 ° C
TA = 70 ° C
12.4
10
Continuous Drain Current
ID
A
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
IDM
IAS
49.6
35
L = 0.1mH
TA = 25 ° C
TA = 70 ° C
EAS
61.2
2.2
mJ
W
PD
Power Dissipation
1.4
Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
° C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
RJA
TYPICAL
MAXIMUM
UNITS
° C / W
Junction-to-Ambient
55
25
Junction-to-Case
RJC
1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25° C.
.ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)
LIMITS
MIN TYP MAX
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
40
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VDS = 0V, VGS = ±20V
VDS = 32V, VGS = 0V
V
1.3 1.75 2.3
±100
1
nA
A
Zero Gate Voltage Drain Current
IDSS
VDS = 30V, VGS = 0V, TJ = 55 ° C
VGS = 10V, ID = 11A
10
4.6
5.4
7
9
Drain-Source On-State
Resistance1
mΩ
RDS(ON)
VGS =4.5V, ID = 11A
1
J-7-5
REV 1.0