Datasheet > PTH12060YAD

PTH12060YAD

更新时间： 2024-11-19 06:05:47

品牌	Logo	应用领域
艾默生 - EMERSON-NETWORKPOWER		存储双倍数据速率
页数	文件大小	规格书
4页	232K
描述
Non-isolated DDR/QDR Memory Bus Termination Module

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

PTH12060YAD 数据手册

PTHxx060Y

3.3 / 5 / 12 Vin Single Ou t put

DC-DC CONVERTERS Non-isolated DDR/QDR Memory Bus Termination Module

• V bus termination output (output the system V_REF

)

NEW Product

• 10 A output current

• 3.3 Vdc, 5 Vdc or 12 Vdc input voltage

• DDR and QDR compatible

• ON/OFF inhibit (for V standby)

• Under-voltage lockout

• Operating temperature range: -40 ºC to +85 ºC

• Efficiencies up to 91%

• Output overcurrent protection (non-latching, auto-reset)

• Point-of-Load-Alliance (POLA) compatible

• Available RoHS compliant

The PTHxx060Y are a new series of non-isolated dc-dc converters designed specifically

for bus termination in DDR and QDR memory applications. Operating from either a

3.3 Vdc, 5 Vdc or 12 Vdc input, the modules generate a

sink up to 10 A of current to accurately track their

output that will source or

input.

is the required bus

REF

termination supply voltage, and

bus receiver comparators.

is the reference voltage for the memory and chipset

REF

is usually set to half the

DDQ

power supply voltage.

REF

The PTHxx060Y series employs an actively switched synchronous rectifier output to

provide state of the art stepdown switching conversion. The products are small in size

and are an ideal choice where space, performance and high efficiency are desired.

2 YEAR WARRANTY

All specifications are typical at nominal input, V_REF= 1.25 V, full load at 25 °C

unless otherwise stated. C_in, C_o1and C_o2= typical value

SPECIFICATIONS

OUTPUT SPECIFICATIONS

INPUT SPECIFICATIONS CONTD.

Output current

(See Note 1)

(over ∆V_REFrange)

±10 A

Input capacitance

(See Note 3)

PTH03060Y and PTH05060Y

PTH12060Y

330 µF

560 µF

Remote ON/OFF

Positive logic

Tracking range for V_REF

0.55-1.8 V

GENERAL SPECIFICATIONS

Tracking tolerance to V_REF(V_TT- V_REF

(over line, load

)

-10 mV to +10 mV

Efficiency

(Io = 8 A)

PTH03060Y

PTH05060Y

PTH12060Y

86% typ.

83% typ.

and temperature)

Ripple and noise

20 MHz bandwidth

20 mV pk-pk

Insulation voltage

Non-isolated

Load transient response

(See Note 4)

30 µs settling time

Overshoot/undershoot 25 mV typ.

Switching frequency

PTH03060Y

PTH05060Y

PTH12060Y

550-650 kHz

200-300 kHz

Output capacitance:

Non-ceramic values

(See Notes 4 and 5)

PTH03060Y 470 µF typ., 5,500 µF max.

PTH05060Y 470 µF typ., 5,500 µF max.

PTH12060Y 940 µF typ., 5,500 µF max.

Approvals and

standards

EN60950

UL/cUL60950

Ceramic values

(See Note 4)

PTH03060Y 200 µF typ., 300 µF max.

PTH05060Y 200 µF typ., 300 µF max.

PTH12060Y 400 µF typ., 600 µF max.

Material flammability

Dimensions

UL94V-0

(L x W x H)

25.27 x 15.75 x 9.00 mm

0.995 x 0.620 x 0.354 in

(See Note 6)

ESR (non-ceramic)

4 mΩ min

Weight

MTBF

3.7 g (0.13 oz)

INPUT SPECIFICATIONS

Input current

Telcordia SR-332

6,000,000 hours

No load

10 mA

ENVIRONMENTAL SPECIFICATIONS

Input voltage range

PTH03060Y

PTH05060Y

PTH12060Y

2.95-3.65 Vdc

4.5-5.5 Vdc

10.8-13.2 Vdc

Thermal performance

(See Note 2)

Operating ambient,

temperature

-40 ºC to +85 ºC

Non-operating

-40 ºC to +125 ºC

Level 3

Undervoltage lockout:

PTH03060Y

MSL (‘Z’ suffix only)

JEDEC J-STD-020C

All models

Vin increasing 2.45 V typ., 2.80 V max.

Vin decreasing 2.20 V min., 2.40 V typ.

PROTECTION

PTH05060Y

PTH12060Y

Vin increasing 4.30 V typ., 4.45 V max.

Vin decreasing 3.40 V min., 3.70 V typ.

Overcurrent threshold

(auto reset)

20 A typ.

Vin increasing

Vin decreasing

9.5 V typ., 10.4 V max.

8.80 V min., 9.0 V typ.

File Name: pthxx060y.pdf Rev (02): 19 Dec 2005

12 3 4

中文翻译

下载PDF

与PTH12060YAD相关器件

型号	品牌	获取价格	描述	数据表
PTH12060YADT	EMERSON-NETWORKPOWER	获取价格	Non-isolated DDR/QDR Memory Bus Termination Module
PTH12060YAH	EMERSON-NETWORKPOWER	获取价格	Non-isolated DDR/QDR Memory Bus Termination Module
PTH12060YAH	TI	获取价格	MEMORY BUS TERMINATION MODULES
PTH12060YAHT	EMERSON-NETWORKPOWER	获取价格	Non-isolated DDR/QDR Memory Bus Termination Module
PTH12060YAS	EMERSON-NETWORKPOWER	获取价格	Non-isolated DDR/QDR Memory Bus Termination Module
PTH12060YAS	TI	获取价格	MEMORY BUS TERMINATION MODULES
PTH12060YAST	EMERSON-NETWORKPOWER	获取价格	Non-isolated DDR/QDR Memory Bus Termination Module
PTH12060YAST	TI	获取价格	用于 DDR/QDR 存储器的 10A、12V 输入、总线终端电源模块 \| EUY \| 1
PTH12060YAZ	EMERSON-NETWORKPOWER	获取价格	Non-isolated DDR/QDR Memory Bus Termination Module
PTH12060YAZ	TI	获取价格	MEMORY BUS TERMINATION MODULES

与PTH12060YAD相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

22
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

14
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

44
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

43

产品中心

服务支持

精选活动

关于我们

帮助中心

PTH12060YAD

PTH12060YAD 数据手册

与PTH12060YAD相关器件

与PTH12060YAD相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

PTH12060YAD

PTH12060YAD 数据手册

与PTH12060YAD相关器件

与PTH12060YAD相关文章

您还可以找

您在本页遇到什么问题？