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PTFA192001E PDF预览

PTFA192001E

更新时间： 2024-11-19 09:58:43
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体射频场效应晶体管局域网
页数 文件大小 规格书
11页 278K
描述
Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz

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中文翻译

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PTFA192001E 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-CDFM-F2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：8.44
Is Samacsys：N外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：65 V
FET 技术：METAL-OXIDE SEMICONDUCTOR最高频带：L BAND
JESD-30 代码：R-CDFM-F2JESD-609代码：e4
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：200 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子面层：GOLD端子形式：FLAT
端子位置：DUAL晶体管元件材料：SILICON
Base Number Matches：1

PTFA192001E 数据手册

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PTFA192001E  
PTFA192001F  
Confidential, Limited Internal Distribution  
Thermally-Enhanced High Power RF LDMOS FETs  
200 W, 1930 – 1990 MHz  
Description  
The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs  
intended for single- and two-carrier WCDMA and CDMA applications  
from 1930 to 1990 MHz. Features include input and output matching,  
and thermally-enhanced packages with slotted or earless flanges.  
Manufactured with Infineon's advanced LDMOS process, these  
devices provide excellent thermal performance and superior reliability.  
PTFA192001E  
Package H-36260-2  
PTFA192001F  
Package H-37260-2  
Features  
2-Carrier WCDMA Drive-up  
VDD = 30 V, IDQ = 1600 mA, ƒ = 1960 MHz, 3GPP  
WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing  
•
Pb-free, RoHS-compliant and thermally-enhanced  
packages  
•
•
Broadband internal matching  
-25  
-30  
-35  
-40  
-45  
-50  
-55  
30  
25  
20  
15  
10  
5
Typical two-carrier WCDMA performance at 1990  
MHz, 30 V  
- Average output power = 47.0 dBm  
- Linear Gain = 15.9 dB  
- Efficiency = 27%  
- Intermodulation distortion = –36 dBc  
- Adjacent channel power = –41 dBc  
Efficiency  
IM3  
•
Typical single-carrier WCDMA performance at 1960  
MHz, 30 V, 3GPP signal, P/AR = 7.5 dB  
- Average output power = 48.5 dBm  
- Linear Gain = 15.9 dB  
- Efficiency = 34%  
- Intermodulation distortion = –37 dBc  
- Adjacent channel power = –40 dBc  
ACPR  
0
34  
36  
38  
40  
42  
44  
46  
48  
Output Power, avg. (dBm)  
•
•
Typical CW performance, 1960 MHz, 30 V  
- Output power at P–1dB = 240 W  
- Efficiency = 57%  
Integrated ESD protection: Human Body Model,  
Class 2 (minimum)  
•
•
Excellent thermal stability, low HCI drift  
Capable of handling 5:1 VSWR @ 30 V, 200 W  
(CW) output power  
All published data at T  
= 25°C unless otherwise indicated  
*See Infineon distributor for future availability.  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 11  
Rev. 05, 2008-05-15  
1234567...11

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