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PTFA191001F PDF预览

PTFA191001F

更新时间： 2024-11-19 09:58:43
品牌 Logo 应用领域
英飞凌 - INFINEON 射频
页数 文件大小 规格书
11页 249K
描述
Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz

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中文翻译

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PTFA191001F 技术参数

生命周期：Active包装说明：31248, 2 PIN
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.69
其他特性：HIGH RELIABILITY外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：65 V
FET 技术：METAL-OXIDE SEMICONDUCTOR最高频带：L BAND
JESD-30 代码：R-CDFP-F2JESD-609代码：e3
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：200 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLATPACK极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子面层：MATTE TIN端子形式：FLAT
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

PTFA191001F 数据手册

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PTFA191001E  
PTFA191001F  
Confidential, Limited Internal Distribution  
Thermally-Enhanced High Power RF LDMOS FETs  
100 W, 1930 – 1990 MHz  
Description  
The PTFA191001E and PTFA191001F are thermally-enhanced,  
100-watt, internally-matched LDMOS FETs intended for WCDMA,  
IS-95 and CDMA2000 applications. They are characterized for single-  
and two-carrier WCDMA operation from 1930 to 1990 MHz.  
Thermally-enhanced packaging provides the coolest operation  
available.  
PTFA191001E  
Package H-36248-2  
PTFA191001F  
Package H-37248-2  
Features  
Two-carrier WCDMA Drive-up  
VDD = 30 V, IDQ = 900 mA, ƒ = 1960 MHz, 3GPP WCDMA  
signal, P/A R = 8 dB, 10 MHz carrier spacing  
•
Thermally-enhanced packages, Pb-free and  
RoHS-compliant  
•
•
Broadband internal matching  
-23  
-28  
-33  
-38  
-43  
-48  
-53  
35  
30  
25  
20  
15  
10  
5
Typical two-carrier WCDMA performance at 1960  
MHz, 30 V  
- Average output power = 25 W  
- Linear Gain = 17.0 dB  
- Efficiency = 27.5%  
- Intermodulation distortion = –37 dBc  
- Adjacent channel power = –41.0 dBc  
Efficiency  
IM3  
•
Typical two-carrier IS-95 performance at 1930  
MHz, 30 V  
- Average output power = 25 W  
- Efficiency = 28%  
- Intermodulation distortion = –35 dBc @ 1.2288  
- Adjacent channel power = –51 dBm  
ACPR  
34  
36  
38  
40  
42  
44  
46  
•
•
Typical CW performance, 1960 MHz, 30 V  
- Output power at P–1dB = 130 W  
- Efficiency = 56%  
Average Output Power (dBm)  
Integrated ESD protection: Human Body Model,  
Class 2 (minimum)  
•
•
Excellent thermal stability, low HCI drift  
Capable of handling 10:1 VSWR @ 30 V,  
100 W (CW) output power  
All published data at T  
= 25°C unless otherwise indicated  
*See Infineon distributor for future availability.  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 11  
Rev. 04, 2007-10-31  
1234567...11

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