Datasheet > PTFA191001EV4

PTFA191001EV4

更新时间： 2024-11-19 21:22:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	244K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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技术参数
数据手册

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PTFA191001EV4 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.84	配置：	Single
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	200 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	417 W	子类别：	FET General Purpose Power
Base Number Matches：	1

PTFA191001EV4 数据手册

PTFA191001E

PTFA191001F

Confidential, Limited Internal Distribution

Thermally-Enhanced High Power RF LDMOS FETs

100 W, 1930 – 1990 MHz

Description

The PTFA191001E and PTFA191001F are thermally-enhanced,

100-watt, internally-matched LDMOS FETs intended for WCDMA,

IS-95 and CDMA2000 applications. They are characterized for single-

and two-carrier WCDMA operation from 1930 to 1990 MHz.

Thermally-enhanced packaging provides the coolest operation

available.

PTFA191001E

Package H-36248-2

PTFA191001F

Package H-37248-2

Features

Two-carrier WCDMA Drive-up

V_DD= 30 V, I_DQ= 900 mA, ƒ = 1960 MHz, 3GPP WCDMA

signal, P/A R = 8 dB, 10 MHz carrier spacing

•

Thermally-enhanced packages, Pb-free and

RoHS-compliant

•

Broadband internal matching

-23

-28

-33

-38

-43

-48

-53

Typical two-carrier WCDMA performance at 1960

MHz, 30 V

- Average output power = 25 W

- Linear Gain = 17.0 dB

- Efficiency = 27.5%

- Intermodulation distortion = –37 dBc

- Adjacent channel power = –41.0 dBc

Efficiency

IM3

•

Typical two-carrier IS-95 performance at 1930

MHz, 30 V

- Average output power = 25 W

- Efficiency = 28%

- Intermodulation distortion = –35 dBc @ 1.2288

- Adjacent channel power = –51 dBm

ACPR

•

Typical CW performance, 1960 MHz, 30 V

- Output power at P–1dB = 130 W

- Efficiency = 56%

Average Output Power (dBm)

Integrated ESD protection: Human Body Model,

Class 2 (minimum)

•

Excellent thermal stability, low HCI drift

Capable of handling 10:1 VSWR @ 30 V,

100 W (CW) output power

All published data at T

= 25°C unless otherwise indicated

*See Infineon distributor for future availability.

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 11

Rev. 04, 2007-10-31

12 3 4 5 6 7...11

中文翻译

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与PTFA191001EV4相关器件

型号	品牌	获取价格	描述	数据表
PTFA191001F	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz
PTFA191401E	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic
PTFA191401F	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic
PTFA192001E	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz
PTFA192001E-200W	INFINEON	获取价格	RF Power Field-Effect Transistor,
PTFA192001EV4	INFINEON	获取价格	RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
PTFA192001EV4R250XTMA1	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic
PTFA192001EV4XWSA1	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic
PTFA192001F	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz
PTFA192001F-200W	INFINEON	获取价格	RF Power Field-Effect Transistor

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