Datasheet > PTFA190451FV4

PTFA190451FV4

更新时间： 2024-11-19 20:01:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	362K
描述
RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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技术参数
数据手册

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PTFA190451FV4 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	风险等级：	5.84
配置：	Single	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最高工作温度：	200 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	211 W	子类别：	FET General Purpose Power
Base Number Matches：	1

PTFA190451FV4 数据手册

PTFA190451E

PTFA190451F

Confidential, Limited Internal Distribution

Thermally-Enhanced High Power RF LDMOS FETs

45 W, 1930 – 1990 MHz

Description

The PTFA190451E and PTFA190451F are thermally-enhanced,

45-watt, internally matched LDMOS FETs designed for WCDMA,

TD-SCDMA and other cellular standards in the 1930 to 1990 MHz

frequency band. These devices are available in thermally-enhanced

packages with eared or earless flanges. Manufactured with Infineon's

advanced LDMOS process, these devices provide excellent thermal

performance and superior reliability.

PTFA190451E

Package H-36265-2

PTFA190451F

Package H-37265-2

Features

2-Carrier WCDMA Drive-up

V_DD= 28 V, I_DQ= 450 mA, ƒ = 1960 MHz, 3GPP WCDMA

signal, PAR = 8 dB, 10 MHz carrier spacing

•

Broadband internal matching

Typical two-carrier WCDMA performance at 1960

MHz, 28 V

-25

-30

-35

-40

-45

-50

-55

- Average output power = 11 W

- Linear gain = 17.5 dB

- Efficiency = 28.0%

- Intermodulation distortion = –39 dBc

- Adjacent channel power = –42 dBc

Efficiency

IM3

•

Typical CW performance, 1960 MHz, 28 V

- Output power at P–1dB = 60 W

- Efficiency = 60%

Integrated ESD protection: Human Body Model,

Class 2 (minimum)

ACPR

•

Excellent thermal stability, low HCI drift

Capable of handling 10:1 VSWR @ 28 V,

45 W (CW) output power

Average Output Power (dBm)

•

Pb-free and RoHS compliant

RF Characteristics

WCDMA Measurements (tested in Infineon test fixture)

= 28 V, I = 450 mA, P = 11 W average

OUT

ƒ = 1955 MHz, ƒ = 1965 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF

Characteristic

Gain

Symbol

Min

16.5

Typ

17.5

Max

—

Unit

Drain Efficiency

h_D

—

Intermodulation Distortion

IMD

—

–39

–37

dBc

All published data at T

= 25°C unless otherwise indicated

*See Infineon distributor for future availability.

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 10

Rev. 03.1, 2009-02-20

12 3 4 5 6 7...10

中文翻译

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与PTFA190451FV4相关器件

型号	品牌	获取价格	描述	数据表
PTFA191001E	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz
PTFA191001EV4	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
PTFA191001F	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz
PTFA191401E	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic
PTFA191401F	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic
PTFA192001E	INFINEON	获取价格	Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz
PTFA192001E-200W	INFINEON	获取价格	RF Power Field-Effect Transistor,
PTFA192001EV4	INFINEON	获取价格	RF Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
PTFA192001EV4R250XTMA1	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic
PTFA192001EV4XWSA1	INFINEON	获取价格	RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic

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