生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-CDFM-F2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 65 V |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最高频带: | L BAND |
JESD-30 代码: | R-CDFM-F2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PTE10045 | ERICSSON |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic | |
PTE10048 | ERICSSON |
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RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic | |
PTE10049 | ERICSSON |
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RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel | |
PTE10052 | ERICSSON |
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RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel | |
PTE10053 | ERICSSON |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic | |
PTE10101 | ERICSSON |
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RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel | |
PTE10101-A | ERICSSON |
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RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel | |
PTE10107 | ERICSSON |
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RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic | |
PTE10114 | ERICSSON |
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RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic | |
PTE10122 | ERICSSON |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semic |