生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-CDSO-G8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 配置: | SINGLE |
最小漏源击穿电压: | 65 V | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最高频带: | L BAND | JESD-30 代码: | R-CDSO-G8 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PTE10012 | ERICSSON |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic | |
PTE10015 | ERICSSON |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel | |
PTE10019 | ERICSSON |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel | |
PTE10020 | ERICSSON |
获取价格 |
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel | |
PTE10021 | ERICSSON |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic | |
PTE10026 | ERICSSON |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel | |
PTE10027 | ERICSSON |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel | |
PTE10035 | ERICSSON |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic | |
PTE10036 | ERICSSON |
获取价格 |
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel | |
PTE10041 | ERICSSON |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semic |