Datasheet > PTD10HN03

PTD10HN03

更新时间： 2025-07-19 19:55:03

品牌	Logo	应用领域
金誉半导体 - HTSEMI		栅
页数	文件大小	规格书
6页	695K
描述
封装形式 : TO-252; 工艺 : 沟槽型; 沟道类型 : 单N; 防静电ESD : 否; 漏源耐压 Vds(V) : 30.000; 栅源耐压 Vgs(V) : ±20; 阈值电压 Vth(

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数据手册

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PTD10HN03 数据手册

PTD10HN03

30V/100A N-Channel Advanced Power MOSFET

Features

BVDSS

100

2.6

• Improved dv/dt Capability, High Ruggedness

•

Maximum Junction Temperature Range (150°C)

100% Avalanche Tested

RDSON@VGS=10V

RDSON@VGS=4.5V

mΩ

Applications

•

Power factor correction（PFC）

•

Switched mode power supplies(SMPS)

• Uninterruptible Power Supply（UPS）

TO-252

Order Information

Product

Package

Marking

Reel Size

Reel

Carton

50000PCS

PTD10HN03

TO-252

PTD10HN03

13inch

2500PCS

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings (TC=25°C Unless Otherwise Noted)

Drain-Source Breakdown Voltage

Gate-Source Voltage

V_(BR)DSS

V_GS

±20

150

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

°C

-55 to 150

100

STG

TC =25°C

Mounted on Large Heat Sink

Single Pulse Avalanche Energy (Note1)

EAS

238

400

100

Pulse Drain Current Tested (Sillicon Limit) (Note2)

Continuous Drain current

TC =25°C

Maximum Power Dissipation

Thermal Resistance Junction−to−Case (Note3)

1.42

°C/W

θJc

www. htsemi. com

V2.0

JinYu

Semiconductor

2022/12

12 3 4 5 6

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