Datasheet > PTB20249

PTB20249

更新时间： 2024-11-20 22:44:15

品牌	Logo	应用领域
爱立信 - ERICSSON		晶体晶体管射频蜂窝蜂窝式无线
页数	文件大小	规格书
3页	628K
描述
2.5 Watts, 1465-1513 MHz Cellular Radio RF Power Transistor

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中文翻译

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技术参数
数据手册

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PTB20249 技术参数

生命周期：	Obsolete	包装说明：	CHIP CARRIER, R-CQCC-N3
Reach Compliance Code：	unknown	风险等级：	5.84
其他特性：	HIGH RELIABILITY	最大集电极电流 (IC)：	0.5 A
配置：	SINGLE	最高频带：	L BAND
JESD-30 代码：	R-CQCC-N3	元件数量：	1
端子数量：	3	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	RECTANGULAR	封装形式：	CHIP CARRIER
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	NO LEAD
端子位置：	QUAD	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

PTB20249 数据手册

PTB 20249

2.5 Watts, 1465–1513 MHz

Cellular Radio RF Power Transistor

Description

The 20249 is a class AB, NPN, common emitter RF power transistor

intended for 26 Vdc operation from 1465 to 1513 MHz. Rated at 2.5

watts minimum output power, it may be used for both CW and PEP

applications. Ion implantation, nitride surface passivation and gold

metallization are used to ensure excellent device reliability. 100% lot

traceability is standard.

2.5 Watts, 26 Vdc

Class AB Characteristics

Surface Mountable

Available in Tape and Reel

Gold Metallization

Silicon Nitride Passivated

Typical Output Power vs. Input Power

20249

LOT CODE

V_CC= 26 V

_CQ= 25 mA

f = 1513 MHz

0.05

0.1

0.15

0.2

0.25

0.3

0.35

Input Power (Watts)

Package 20227

Maximum Ratings

Parameter

Symbol

Value

Unit

Vdc

Adc

Collector-Emitter Voltage

Collector-Base Voltage

CER

CBO

EBO

Emitter-Base Voltage (collector open)

Collector Current (continuous)

0.5

Total Device Dissipation at T

Above 25°C derate by

= 25°C

Watts

W/°C

flange

0.057

Storage Temperature Range

Thermal Resistance (T

–40 to +150

17.5

°C

STG

= 70°C)

°C/W

θJC

flange

9/28/98

12 3

中文翻译

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