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PTB20235

更新时间： 2024-11-20 22:44:15

品牌	Logo	应用领域
爱立信 - ERICSSON		晶体射频双极晶体管放大器局域网
页数	文件大小	规格书
5页	130K
描述
70 Watts, 2.1-2.2 GHz Wideband CDMA Power Transistor

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技术参数
数据手册

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PTB20235 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-CDFM-F4
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	其他特性：	HIGH RELIABILITY
最大集电极电流 (IC)：	12 A	配置：	COMMON EMITTER, 2 ELEMENTS
最高频带：	S BAND	JESD-30 代码：	R-CDFM-F4
元件数量：	2	端子数量：	4
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

PTB20235 数据手册

PTB 20235

70 Watts, 2.1–2.2 GHz

Wideband CDMA Power Transistor

Description

The 20235 is a classAB, NPN, push-pull RF power transistor intended

for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP

minimum output power, it is specifically intended for operation as a

final stage in Wide CDMA systems. Ion implantation, nitride surface

passivation and gold metallization ensure excellent device reliability.

100% lot traceability is standard.

70 Watts, 2.1–2.2 GHz

Class AB Characteristics

Gold Metallization

Silicon Nitride Passivated

Typical Output Power vs. Input Power

120

100

20235

LOT CODE

V_CC= 26 V

_CQ= 150 mA Total

f = 2.2 GHz

Input Power (Watts)

Package 20225 *

Maximum Ratings

Parameter

Symbol

Value

Unit

Vdc

Adc

Collector-Emitter Voltage

Collector-Base Voltage

3.5

CER

CBO

EBO

Emitter-Base Voltage (collector open)

Collector Current (continuous)

Total Device Dissipation at T

Above 25°C derate by

= 25°C

320

Watts

W/°C

flange

1.83

Storage Temperature Range

Thermal Resistance (T

–40 to +150

0.547

°C

STG

= 70°C)

°C/W

θJC

flange

* This package not recommended for class A or CW operation. Two PTB 20245s recommended for CW operation.

9/28/98

12 3 4 5

中文翻译

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