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PTB20200 PDF预览

PTB20200

更新时间: 2024-11-21 21:21:59
品牌 Logo 应用领域
爱立信 - ERICSSON 局域网放大器晶体管
页数 文件大小 规格书
3页 190K
描述
RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN

PTB20200 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F6
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84其他特性:HIGH RELIABILITY
外壳连接:EMITTER最大集电极电流 (IC):6.7 A
集电极-发射极最大电压:30 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-CDFM-F6
元件数量:1端子数量:6
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

PTB20200 数据手册

 浏览型号PTB20200的Datasheet PDF文件第2页浏览型号PTB20200的Datasheet PDF文件第3页 
e
PTB 20204  
1.0 Watt, 380–500 MHz  
RF Power Transistor  
Description  
• 1.0 Watt, 380–500 MHz  
• Class A Characteristics  
• -40 dB Max Two-Tone IMD at 1.0 W(PEP)  
• Gold Metallization  
• Silicon Nitride Passivated  
The 20204 is a class A, NPN, common emitter RF power transistor  
intended for 24 Vdc operation from 380 to 500 MHz. Rated at 1.0  
watt minimum output power, it may be used for both CW and PEP  
applications. Ion implantation, nitride surface passivation and gold  
metallization ensure excellent device reliability. 100% lot traceability  
is standard.  
Typical Output Power vs. Input Power  
2.0  
1.6  
1.2  
20204  
LOT CODE  
0.8  
0.4  
0.0  
VCE = 24 V  
CQ = 340 mA  
I
f = 500 MHz  
0.00  
0.03  
0.06  
0.09  
0.12 0.15  
Package 20227  
Input Power (Watts)  
Maximum Ratings  
Parameter  
Symbol  
Value  
60  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector-Emitter Voltage  
Collector-Base Voltage  
V
CER  
CBO  
EBO  
V
V
60  
Emitter-Base Voltage (collector open)  
Collector Current (continuous)  
4.0  
I
C
0.5  
Total Device Dissipation at T  
Above 25°C derate by  
= 25°C  
P
11  
Watts  
W/°C  
D
flange  
0.0625  
Storage Temperature Range  
Thermal Resistance (T  
T
-40 to +150  
16  
°C  
STG  
= 70°C)  
R
°C/W  
θJC  
flange  
1
9/28/98  

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