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PTB20155

更新时间： 2024-11-17 22:44:15

品牌	Logo	应用领域
爱立信 - ERICSSON		晶体晶体管
页数	文件大小	规格书
3页	46K
描述
9 Watts, 610-960 MHz UHF Power Transistor

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PTB20155 数据手册

PTB 20155

9 Watts, 610–960 MHz

UHF Power Transistor

Description

The 20155 is an NPN common base RF power transistor intended

for 28 Vdc class C operation from 610 to 960 MHz. Rated at 9 watts

minimum output power, it may be used for both CW and PEP

applications. Ion implantation, nitride surface passivation and gold

metallization are used to ensure excellent device reliability. 100% lot

traceability is standard.

9 Watts, 610–960 MHz

Class C Characteristics

Gold Metallization

Silicon Nitride Passivated

Typical Gain & Return Loss vs. Frequency

(as measured in a broadband circuit)

Gain (dB)

-5

V_CC= 28 V

Pin = 9 W

20155

LOT CODE

-10

-15

-20

-25

Return Loss (dB)

700

750

800

850

900

950

Frequency (MHz)

Package 20209

Maximum Ratings

Parameter

Symbol

Value

Unit

Vdc

Adc

Collector-Emitter Voltage

Collector-Base Voltage

CER

CBO

EBO

Emitter-Base Voltage (collector open)

Collector Current (continuous)

6.7

Total Device Dissipation at T

Above 25°C derate by

= 25°C

Watts

W/°C

flange

0.37

Storage Temperature Range

Thermal Resistance (T

–40 to +150

2.7

°C

STG

= 70°C)

°C/W

θJC

flange

9/28/98

12 3

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