Datasheet > PTB20148

PTB20148

更新时间： 2024-11-17 22:44:15

品牌	Logo	应用领域
爱立信 - ERICSSON		晶体晶体管射频蜂窝无线
页数	文件大小	规格书
3页	50K
描述
60 Watts, 925-960 MHz Cellular Radio RF Power Transistor

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中文翻译

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技术参数
数据手册

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PTB20148 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-CDFM-F6
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.84	其他特性：	HIGH RELIABILITY
外壳连接：	EMITTER	最大集电极电流 (IC)：	8 A
集电极-发射极最大电压：	25 V	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-CDFM-F6	端子数量：	6
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

PTB20148 数据手册

PTB 20148

60 Watts, 925–960 MHz

Cellular Radio RF Power Transistor

Description

The 20148 is a class AB, NPN, common emitter RF power transistor

intended for 25 Vdc operation from 925 to 960 MHz. Rated at 60

watts minimum output power, it may be used for both CW and PEP

applications. Ion implantation, nitride surface passivation and gold

metallization are used to ensure excellent device reliability. 100% lot

traceability is standard.

60 Watts, 925–960 MHz

Class AB Characteristics

50% Min Collector Efficiency at 60 Watts

Gold Metallization

Silicon Nitride Passivated

Gain vs. Frequency

(as measured in a broadband circuit)

V_CC= 25 V

_CQ= 200 mA

20148

Pout = 60 W

LOT CODE

920 925 930 935 940 945 950 955 960 965

Package 20200

Frequency (MHz)

Maximum Ratings

Parameter

Symbol

Value

Unit

Vdc

Adc

Collector-Emitter Voltage

Collector-Base Voltage

CER

CBO

EBO

Emitter-Base Voltage (collector open)

Collector Current (continuous)

4.0

8.0

Total Device Dissipation at T

Above 25°C derate by

= 25°C

145

Watts

W/°C

flange

0.83

Storage Temperature Range

Thermal Resistance (T

–40 to +150

1.2

°C

STG

= 70°C)

°C/W

θJC

flange

9/28/98

12 3

中文翻译

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