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PTB20146

更新时间： 2024-11-17 22:44:15

品牌	Logo	应用领域
爱立信 - ERICSSON		晶体晶体管射频蜂窝蜂窝式无线
页数	文件大小	规格书
2页	43K
描述
0.4 Watt, 1.8-2.0 GHz Cellular Radio RF Power Transistor

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PTB20146 数据手册

PTB 20146

0.4 Watt, 1.8–2.0 GHz

Cellular Radio RF Power Transistor

Description

The 20146 is a class A, NPN, common emitter RF power transistor

intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt

minimum output power, it may be used for both CW and PEP

applications. Ion implantation, nitride surface passivation and gold

metallization are used to ensure excellent device reliability. 100% lot

traceability is standard.

0.4 Watt, 1.8–2.0 GHz

Class A Characteristics

Tested to solderability standards:

- IEC-68-2-54

- ANSI/J Std-002-A

Gold Metallization

Silicon Nitride Passivated

Surface Mountable

Available in Tape and Reel

Typical Output Power vs. Input Power

1.0

V_CC= 26 V

0.8

0.6

0.4

0.2

0.0

_CQ= 140 mA

f = 2.0 GHz

20146

LOT CODE

0.00

0.02

0.04

0.06

0.08

0.10

Package 20208

Input Power (Watts)

Maximum Ratings

Parameter

Symbol

Value

Unit

Vdc

Adc

Collector-Emitter Voltage

Collector-Base Voltage

CER

CBO

EBO

Emitter-Base Voltage (collector open)

Collector Current (continuous)

4.0

0.5

Total Device Dissipation at T

Above 25°C derate by

= 25°C

5.4

Watts

W/°C

flange

0.031

Storage Temperature Range

Thermal Resistance (T

–40 to +150

32.3

°C

STG

= 70°C)

°C/W

θJC

flange

9/28/98

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