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PTB20141 PDF预览

PTB20141

更新时间: 2024-11-20 22:44:15
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爱立信 - ERICSSON 晶体晶体管射频放大器蜂窝蜂窝式无线局域网
页数 文件大小 规格书
2页 45K
描述
18 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor

PTB20141 数据手册

 浏览型号PTB20141的Datasheet PDF文件第2页 
e
PTB 20141  
18 Watts, 1.465–1.513 GHz  
Cellular Radio RF Power Transistor  
Description  
The 20141 is a class AB, NPN, common emitter RF power transistor  
intended for 23 Vdc operation from 1.465 to 1.513 GHz. Rated at 18  
watts minimum output power, it may be used for both CW and PEP  
applications. Ion implantation, nitride surface passivation and gold  
metallization are used to ensure excellent device reliability. 100% lot  
traceability is standard.  
• 18 Watts, 1.465–1.513 GHz  
• Class AB Characteristics  
• 45% Min Collector Efficiency at 9 Watts  
• Gold Metallization  
• Silicon Nitride Passivated  
Typical Output Power vs. Input Power  
30  
VCC = 23 V  
25  
ICQ = 50 mA  
f = 1.501 GHz  
20  
15  
10  
5
20141  
LOT CODE  
0
0
1
2
3
4
5
Package 20201  
Input Power (Watts)  
Maximum Ratings  
Parameter  
Symbol  
Value  
50  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector-Emitter Voltage  
Collector-Base Voltage  
V
CER  
CBO  
EBO  
V
V
50  
Emitter-Base Voltage (collector open)  
Collector Current (continuous)  
4.0  
I
C
2.0  
Total Device Dissipation at T  
Above 25°C derate by  
= 25°C  
P
51.5  
0.29  
Watts  
W/°C  
D
flange  
Storage Temperature Range  
Thermal Resistance (T  
T
–40 to +150  
3.5  
°C  
STG  
= 70°C)  
R
°C/W  
θJC  
flange  
1
9/28/98  

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