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PTB20111 PDF预览

PTB20111

更新时间: 2024-11-17 22:26:11
品牌 Logo 应用领域
爱立信 - ERICSSON 晶体射频双极晶体管放大器蜂窝无线局域网
页数 文件大小 规格书
3页 50K
描述
85 Watts, 860-900 MHz Cellular Radio RF Power Transistor

PTB20111 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:FLANGE MOUNT, R-CDFM-F2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.1
Is Samacsys:N其他特性:HIGH RELIABILITY
外壳连接:EMITTER最大集电极电流 (IC):20 A
集电极-发射极最大电压:25 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-CDFM-F2
元件数量:1端子数量:2
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

PTB20111 数据手册

 浏览型号PTB20111的Datasheet PDF文件第2页浏览型号PTB20111的Datasheet PDF文件第3页 
e
PTB 20111  
85 Watts, 860–900 MHz  
Cellular Radio RF Power Transistor  
Description  
The 20111 is a class AB, NPN, common emitter RF power transistor  
intended for 25 Vdc operation from 860 to 900 MHz. Rated at 85  
watts minimum output power, it may be used for both CW and PEP  
applications. Ion implantation, nitride surface passivation and gold  
metallization are used to ensure excellent device reliability. 100% lot  
traceability is standard.  
• 25 Volt, 860–900 MHz Characteristics  
- Output Power = 85 Watts  
- Collector Efficiency = 50% at 85 Watts  
- IMD = -30 dBc Max at 60 W(PEP)  
• Class AB Characteristics  
• Gold Metallization  
• Silicon Nitride Passivated  
Typical Output Power vs. Input Power  
100  
80  
60  
201  
LOT CODE  
1
1
40  
VCC = 25 V  
20  
0
I
CQ = 200 mA  
f = 900 MHz  
0
4
8
12  
16  
Package 20216  
Input Power (Watts)  
Maximum Ratings  
Parameter  
Symbol  
Value  
40  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector-Emitter Voltage  
Collector-Base Voltage  
V
CER  
CBO  
EBO  
V
V
65  
Emitter-Base Voltage (collector open)  
Collector Current (continuous)  
4.0  
I
C
20  
Total Device Dissipation at T  
Above 25°C derate by  
= 25°C  
P
159  
Watts  
W/°C  
D
flange  
0.91  
Storage Temperature Range  
Thermal Resistance (T  
T
–40 to +150  
1.1  
°C  
STG  
= 70°C)  
R
°C/W  
θJC  
flange  
1
9/28/98  

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